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Samsung M393AAK40B41-CWD 128GB DDR4-2666MHz RDIMM 8Rx4 CL19 Memory
- Capacity: 128GB
- Type: DDR4 RDIMM (Registered DIMM)
- Speed: 2666MHz
- Latency: CL19
- Rank: 8Rx4
- Voltage: Standard DDR4 voltage
- ECC: Yes (Error-Correcting Code)
- Designed for server and enterprise-grade systems
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Product Overview
The Samsung M393AAK40B41-CWD is a high-performance 128GB DDR4 RDIMM memory module designed for server and workstation environments. It operates at a speed of 2666MHz with a CL19 latency, offering robust data throughput and reliability for demanding applications.
Technical Information
| Memory Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Capacity | 128GB |
| Speed | 2666MHz |
Additional Specifications
| CAS Latency | CL19 |
| Rank | 8Rx4 |
| ECC | Yes |
Product Description
This Samsung 128GB DDR4 RDIMM, model M393AAK40B41-CWD, is engineered for maximum performance and stability in mission-critical server applications. Its 8Rx4 organization provides a high-density solution, ideal for memory-intensive workloads such as virtualization, large databases, and high-performance computing. The registered design helps to reduce electrical load on the memory controller, allowing for higher module counts and greater overall system stability. The module operates at a DDR4-2666MHz frequency, delivering substantial bandwidth for data-intensive tasks. The CL19 latency, while a factor, is balanced by the high speed and capacity, ensuring efficient data access. Error-Correcting Code (ECC) functionality is integrated, which detects and corrects single-bit errors, significantly enhancing data integrity and system reliability, a crucial feature for servers where uptime and accuracy are paramount. Compatibility is key for server memory, and this RDIMM is designed to meet the rigorous demands of enterprise-grade motherboards and chipsets. It adheres to JEDEC standards for DDR4 memory, ensuring broad compatibility with systems that support this memory type and speed. The M393AAK40B41-CWD represents a powerful upgrade option for servers requiring increased memory capacity and performance for advanced computing environments.
