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Samsung M393A4K40BB1-CRC40 32GB DDR4-2400MHz RDIMM 2Rx4 CL17 Memory
- Capacity: 32GB
- Memory Type: DDR4 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 2400MHz (PC4-19200)
- CAS Latency: CL17
- Rank: 2Rx4 (Dual Rank x4)
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
- Ideal for virtualization, databases, and large-scale data processing
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Product Overview
The Samsung M393A4K40BB1-CRC40 is a high-capacity 32GB DDR4 RDIMM memory module, operating at 2400MHz with a CL17 latency. This module is designed for enterprise-level servers and workstations requiring significant memory resources for demanding applications. Its 2Rx4 configuration indicates a dual-rank design with four memory chips per rank, optimized for high bandwidth and efficient data access.
Technical Information
| Memory Size | 32GB |
| Memory Type | DDR4 SDRAM |
| Memory Speed | 2400MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL17 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
This 32GB DDR4 RDIMM from Samsung, model M393A4K40BB1-CRC40, is a critical component for servers and workstations that handle intensive workloads. The substantial 32GB capacity is essential for running multiple virtual machines, managing large databases, or performing complex data analytics. DDR4 technology provides significant improvements in power efficiency and data throughput over previous DDR generations, making it a standard for modern high-performance computing. The 2Rx4 rank configuration means the module is dual-rank, with each rank composed of four memory chips. This design enhances performance by allowing the memory controller to interleave operations between the two ranks, increasing the effective bandwidth and reducing access times. This is particularly advantageous in server environments where memory performance directly impacts application responsiveness and overall system throughput. As a Registered DIMM (RDIMM), this module incorporates an onboard register that buffers address and command signals. This buffering reduces the electrical load on the memory controller, enabling systems to support a greater number of memory modules and higher total memory capacities without compromising signal integrity. The CL17 latency rating specifies the timing for data access, contributing to the module's overall performance profile in conjunction with its speed and rank configuration.
