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Samsung M393A2K43DB2-CVFBQ 16GB DDR4-2933MHz RDIMM 2Rx8 CL21 Memory
- Capacity: 16GB
- Type: DDR4 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 2933MHz (PC4-23466)
- CAS Latency: CL21
- Rank: 2Rx8 (Dual Rank, x8 Data Width)
- ECC: Yes (Error-Correcting Code)
- Voltage: 1.2V
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Product Overview
The Samsung M393A2K43DB2-CVFBQ is a 16GB DDR4 RDIMM memory module. It operates at 2933MHz with CL21 latency, offering a good balance of capacity and speed for server applications.
Technical Information
| Brand | Samsung |
| Part Number | M393A2K43DB2-CVFBQ |
| Memory Type | DDR4 SDRAM |
| Capacity | 16GB |
| Speed | 2933MHz |
Additional Specifications
| Form Factor | RDIMM |
| CAS Latency | CL21 |
| Rank | 2Rx8 |
| ECC | Yes |
Product Description
The Samsung M393A2K43DB2-CVFBQ is a 16GB DDR4 Registered DIMM (RDIMM) memory module, designed for enhanced performance and reliability in server and workstation environments. With a capacity of 16GB, it is suitable for a wide range of enterprise applications, including virtualization, database servers, and cloud computing infrastructure. The module operates at a speed of 2933MHz (PC4-23466), providing faster data access and processing compared to lower-speed modules. This RDIMM features a CAS Latency (CL) of 21, which is appropriate for its 2933MHz operating frequency. The 2Rx8 configuration signifies a dual-rank design with an x8 data width per rank. Dual-rank modules can offer performance advantages in certain scenarios by allowing the memory controller to access data from different ranks concurrently, potentially improving throughput. The x8 data width is a common configuration for server memory. As a standard for server-grade memory, the M393A2K43DB2-CVFBQ includes Error-Correcting Code (ECC) functionality. ECC memory is crucial for detecting and correcting memory errors on the fly, which is essential for maintaining the integrity of data and ensuring the stability of critical server operations. This module operates at the standard DDR4 voltage of 1.2V, ensuring compatibility and power efficiency. It represents a reliable choice for upgrading or populating server memory systems that require a balance of capacity, speed, and data integrity.
