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Samsung M393A2K43BB1-CRC0Q 16GB DDR4-2400MHz RDIMM 2Rx8 CL17 Memory
- Capacity: 16GB
- Memory Type: DDR4 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 2400MHz (PC4-19200)
- CAS Latency: CL17
- Rank: 2Rx8 (Dual Rank x8)
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
- Designed for servers and high-end workstations
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Product Overview
The Samsung M393A2K43BB1-CRC0Q is a 16GB DDR4 RDIMM memory module designed for high-performance computing environments. It operates at a speed of 2400MHz with a CL17 latency, offering a balance of capacity and speed for servers and workstations. This module features a 2Rx8 rank configuration, indicating dual-rank operation with eight memory chips per rank, optimizing data access and overall system responsiveness.
Technical Information
| Memory Size | 16GB |
| Memory Type | DDR4 SDRAM |
| Memory Speed | 2400MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL17 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
The Samsung M393A2K43BB1-CRC0Q is engineered to meet the demanding requirements of modern data centers and enterprise environments. Its 16GB capacity provides ample room for complex applications and large datasets, while the DDR4 technology ensures superior bandwidth and efficiency compared to previous generations. The module's 2400MHz clock speed translates to faster data transfer rates, crucial for tasks such as virtualization, database management, and scientific simulations. The 2Rx8 configuration signifies a dual-rank design, where the memory is divided into two independent ranks. This allows the memory controller to access data from different ranks simultaneously, effectively doubling the bandwidth available to a single rank and reducing latency. This architecture is particularly beneficial in multi-processor systems where memory access can become a bottleneck. Furthermore, the Registered DIMM (RDIMM) form factor includes an onboard register chip that buffers command and address signals. This reduces the electrical load on the memory controller, enabling higher memory capacities and improved signal integrity, especially in systems with many memory modules installed. The CL17 CAS latency indicates the number of clock cycles required to access a specific column address, representing a key performance metric for memory modules.
