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Samsung M393A2K40CB2-CTD7Y 16GB DDR4-2666MHz RDIMM 1Rx4 CL19 Memory
- Capacity: 16GB
- Memory Type: DDR4 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 2666MHz (PC4-21300)
- CAS Latency: CL19
- Voltage: 1.2V
- Rank: 1Rx4 (Single Rank x4)
- ECC: Yes (Error-Correcting Code)
- Designed for servers and workstations
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Product Overview
The Samsung M393A2K40CB2-CTD7Y is a 16GB DDR4 RDIMM memory module. It operates at 2666MHz with a CL19 latency, designed for servers and high-performance workstations.
Technical Information
| Capacity | 16GB |
| Memory Type | DDR4-2666MHz |
| Form Factor | RDIMM |
| Speed | 2666 MT/s |
Additional Specifications
| CAS Latency | CL19 |
| Voltage | 1.2V |
| Rank | 1Rx4 |
| ECC | Registered ECC |
Product Description
The Samsung M393A2K40CB2-CTD7Y is a high-capacity 16GB memory module engineered for demanding server and workstation environments. It utilizes DDR4 SDRAM technology, offering significant improvements in speed, power efficiency, and density over previous generations. This module operates at a clock speed of 2666MHz, corresponding to a data transfer rate of PC4-21300, ensuring rapid access to data for intensive applications. As a Registered DIMM (RDIMM), this module incorporates an onboard register that buffers command and address signals, reducing electrical load on the memory controller. This feature enhances system stability and allows for higher memory capacities and more memory modules per channel, which is crucial for enterprise-grade systems. The module also features Error-Correcting Code (ECC) functionality, which detects and corrects single-bit errors, thereby improving data integrity and system reliability – a critical requirement for servers handling vital data. With a CAS Latency (CL) of 19 and a single-rank x4 organization (1Rx4), the M393A2K40CB2-CTD7Y is optimized for performance in server platforms. The standard 1.2V operating voltage contributes to power efficiency. This memory module is an ideal choice for upgrading existing server memory or configuring new systems that require robust, high-performance, and reliable memory solutions for virtualization, database management, scientific computing, and other data-intensive workloads.
