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Samsung M393A2G40EB2-CTD7Q 16GB DDR4-2666MHz RDIMM 2Rx4 CL19 Memory
- 16GB DDR4 SDRAM capacity
- 2666MHz clock speed
- RDIMM (Registered DIMM) form factor
- 2Rx4 module configuration (Dual Rank, x4 organization)
- CL19 CAS Latency
- 1.2V voltage
- ECC (Error-Correcting Code) support
- Designed for server and workstation applications
- High reliability and performance
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Product Overview
The Samsung M393A2G40EB2-CTD7Q is a 16GB DDR4 RDIMM memory module operating at 2666MHz with a CL19 latency. It is designed for server and workstation environments requiring reliable and high-capacity memory.
Technical Information
| Capacity | 16GB |
| Type | DDR4 SDRAM |
| Form Factor | RDIMM |
| Speed | 2666MHz |
Additional Specifications
| Rank | 2Rx4 |
| Latency | CL19 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
This Samsung M393A2G40EB2-CTD7Q is a 16GB DDR4 Registered DIMM (RDIMM) module, engineered for server and high-performance computing environments. It operates at a frequency of 2666MHz, providing a solid performance baseline for memory-intensive tasks. The module features a CAS Latency (CL) of 19, which dictates the number of clock cycles required to access data. The 2Rx4 configuration indicates that the module is dual-rank, with each rank utilizing x4 (4-bit) memory chips. This configuration can offer performance benefits in certain server workloads by allowing the memory controller to access different ranks concurrently. As an RDIMM, it includes a register chip that buffers command and address signals, reducing the electrical load on the memory controller and enabling higher memory capacities and improved system stability. With Error-Correcting Code (ECC) support, this memory module can detect and correct single-bit errors, crucial for maintaining data integrity in mission-critical server applications. The 1.2V operating voltage aligns with the DDR4 standard, ensuring power efficiency. This 16GB DDR4 RDIMM is a reliable choice for upgrading or populating memory in servers and workstations that require robust and stable memory performance.
