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Samsung M392A2K43BB0-CRC40 16GB DDR4-2400MHz VLP RDIMM 2Rx8 Memory

Samsung M392A2K43BB0-CRC40 16GB DDR4-2400MHz VLP RDIMM 2Rx8 Memory

SKU:M392A2K43BB0-CRC40
  • Capacity: 16GB
  • Type: DDR4 SDRAM
  • Speed: 2400MHz (PC4-2400T)
  • Form Factor: VLP RDIMM (Very Low Profile Registered DIMM)
  • Configuration: 2Rx8 (Dual Rank x8)
  • Voltage: 1.2V
  • ECC: Yes (Registered ECC)
  • Rank Interleaving: Supported
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Product Overview

The Samsung M392A2K43BB0-CRC40 is a 16GB DDR4-2400MHz VLP RDIMM memory module. It features a 2Rx8 configuration and operates at 1.2V. This Very Low Profile Registered DIMM is designed for high-density server environments.

Technical Information

Memory Capacity16GB
Memory TypeDDR4 SDRAM
Memory Speed2400MHz
Form FactorVLP RDIMM

Additional Specifications

Rank2Rx8
Voltage1.2V
ECCRegistered ECC

Product Description

The Samsung M392A2K43BB0-CRC40 is a high-capacity 16GB memory module designed for server and enterprise applications. It utilizes the latest DDR4 SDRAM technology, operating at a speed of 2400MHz (PC4-2400T), which offers significant improvements in bandwidth and power efficiency over previous DDR generations. The module is a Very Low Profile (VLP) Registered DIMM (RDIMM), making it ideal for dense server chassis and systems where height restrictions are a concern, allowing for greater memory module density per server. This module features a 2Rx8 configuration, indicating it is dual-ranked with eight memory chips per rank. Dual-rank modules can enhance performance in certain system architectures by allowing the memory controller to access different ranks independently, potentially improving efficiency and throughput. As a Registered DIMM, it includes an onboard register that buffers command and address signals, reducing the electrical load on the memory controller. This buffering is essential for supporting large memory capacities and maintaining signal integrity in complex server systems. Crucially, the M392A2K43BB0-CRC40 supports Error-Correcting Code (ECC). This feature detects and corrects single-bit errors in real-time, significantly enhancing data integrity and system stability – a non-negotiable requirement for mission-critical server operations. Operating at a lower voltage of 1.2V compared to DDR3, it also contributes to reduced power consumption and heat generation within the server. With its combination of capacity, speed, VLP form factor, ECC support, and DDR4 technology, this Samsung module is a robust and efficient memory solution for modern data centers.

Condition:Refurbished

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