Samsung M386AAG40MMB-CVFBQ 128GB DDR4-2933MHz LRDIMM 4Rx4 CL21 Memory

Product Description

The Samsung M386AAG40MMB-CVFBQ is a high-capacity 128GB Load-Reduced Dual In-line Memory Module (LRDIMM) engineered for demanding server and workstation environments. This module utilizes DDR4 SDRAM technology, operating at a rapid speed of 2933MHz, which translates to a bandwidth of PC4-23466. The LRDIMM form factor is crucial for systems requiring higher memory capacities and improved signal integrity, as it incorporates a memory buffer chip to reduce electrical load on the memory controller. This specific module features a quad-rank (4Rx4) configuration, meaning it has four banks of memory chips, each accessed in a 4-bit wide manner. This architecture allows for greater memory density and can contribute to improved performance in certain server workloads. With an CAS Latency (CL) of 21, it strikes a balance between speed and stability, making it suitable for memory-intensive applications such as virtualization, large databases, scientific simulations, and data analytics. As an LRDIMM, the M386AAG40MMB-CVFBQ is designed to work with compatible server motherboards that support this type of memory. It also incorporates Error-Correcting Code (ECC) functionality, which detects and corrects single-bit memory errors, enhancing system reliability and data integrity – a critical feature for mission-critical server operations. This Samsung memory module represents a robust solution for upgrading or populating systems that demand substantial, stable, and high-performance memory resources.