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Samsung M386A4K40BB0-CRC40 32GB DDR4-2400MHz LRDIMM 2Rx4 CL17 Memory

Samsung M386A4K40BB0-CRC40 32GB DDR4-2400MHz LRDIMM 2Rx4 CL17 Memory

SKU:M386A4K40BB0-CRC40
  • 32GB DDR4 SDRAM capacity
  • Speed: 2400MHz (PC4-19200)
  • Type: Load-Reduced DIMM (LRDIMM)
  • Configuration: 2Rx4 (Dual Rank x4)
  • Latency: CL17
  • Voltage: 1.2V
  • ECC (Error-Correcting Code) support
  • Designed for high-density server memory configurations
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Product Overview

The Samsung M386A4K40BB0-CRC40 is a 32GB DDR4-2400MHz Load-Reduced DIMM (LRDIMM) memory module. It features a 2Rx4 rank configuration and CL17 latency, designed for high-capacity server applications requiring enhanced memory performance and stability.

Technical Information

Memory Capacity32GB
Memory TypeDDR4 SDRAM
Speed2400MHz
Form FactorDIMM
Module TypeLRDIMM (Load-Reduced)

Additional Specifications

Rank2Rx4
CAS LatencyCL17
Voltage1.2V
ECCYes
ManufacturerSamsung

Product Description

The Samsung M386A4K40BB0-CRC40 is a high-capacity 32GB DDR4 memory module designed for server environments that demand significant memory resources. Operating at a speed of 2400MHz (PC4-19200), it provides substantial bandwidth for data-intensive applications, virtualization, and large databases. This module utilizes DDR4 technology, offering improvements in speed, power efficiency, and density compared to previous generations. The standard operating voltage for DDR4 is 1.2V, contributing to lower power consumption in large server deployments. This module is a Load-Reduced DIMM (LRDIMM), which incorporates a memory buffer chip. This buffer reduces the electrical load on the memory controller, enabling systems to support a greater number of memory modules and achieve higher total memory capacities than standard RDIMMs or UDIMMs. The LRDIMM architecture is crucial for servers requiring maximum memory expansion, such as those used for in-memory analytics, high-performance computing, or extensive virtualization platforms. Featuring a 2Rx4 (Dual Rank x4) configuration, the memory is organized into two ranks, with each rank having four data lines per chip. This configuration offers a good balance between performance and density for many server workloads. Like most server-grade memory, it supports ECC (Error-Correcting Code) functionality, which is essential for maintaining data integrity and system stability by detecting and correcting memory errors. With a CAS Latency (CL) of 17, this Samsung LRDIMM provides reliable performance for demanding server applications.

Condition:Refurbished

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