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Samsung M386A4G40EM2-CRC 32GB DDR4-2400MHz LRDIMM 4Rx4 CL17 Memory
- Capacity: 32GB
- Memory Type: DDR4 SDRAM
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Speed: 2400MHz (PC4-19200)
- Latency: CL17
- Rank: 4Rx4 (Quad Rank, x4 organization)
- Voltage: 1.2V
- ECC: Yes (Error-Correcting Code)
- Suitable for server and workstation applications.
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Product Overview
The Samsung M386A4G40EM2-CRC is a 32GB LRDIMM (Load-Reduced Dual In-line Memory Module) operating at DDR4-2400MHz with CL17 latency. It is designed for servers and high-performance computing, offering a balance of capacity, speed, and reliability.
Technical Information
| Memory Capacity | 32GB |
| Memory Type | DDR4 SDRAM |
| Form Factor | LRDIMM |
| Speed | 2400MHz |
Additional Specifications
| CAS Latency | CL17 |
| Rank | 4Rx4 |
| Voltage | 1.2V |
| ECC | Yes |
Product Description
The Samsung M386A4G40EM2-CRC is a 32GB Load-Reduced Dual In-line Memory Module (LRDIMM) designed to meet the memory demands of modern servers and high-performance workstations. This module utilizes DDR4 SDRAM technology, operating at a frequency of 2400MHz, which corresponds to a PC4-19200 designation. The LRDIMM architecture is particularly beneficial in systems that require high memory density and improved signal integrity, as it includes a buffer chip to reduce the electrical load on the memory controller, enabling more memory modules to be installed. This memory module features a CAS Latency (CL) of 17, providing a good balance between responsiveness and stability for various computing tasks. The 4Rx4 rank configuration signifies a quad-rank design with a data width of x4 per rank, offering a high-density solution that is efficient for memory-intensive applications. This configuration is often chosen for servers that need to maximize their memory footprint without compromising performance. Equipped with Error-Correcting Code (ECC) capabilities, the M386A4G40EM2-CRC ensures data integrity, a critical feature for server environments where reliability is paramount. ECC detects and corrects single-bit errors, helping to prevent system instability and data corruption. Operating at a standard voltage of 1.2V, this Samsung LRDIMM is a robust and efficient memory component for advanced computing platforms.


