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Samsung M328L3310ET0-CB0M2 256MB DDR-266MHz Micro-DIMM 2Rx8 Memory
- Capacity: 256MB
- Memory Type: DDR SDRAM
- Form Factor: Micro-DIMM
- Speed: 266MHz (PC2100)
- CAS Latency: CL2.5
- Configuration: 2Rx8 (Dual Rank x8)
- Designed for specific compact devices
- Non-ECC memory
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Product Overview
The Samsung M328L3310ET0-CB0M2 is a 256MB DDR memory module in a Micro-DIMM form factor. It operates at 266MHz with a CAS Latency of 2.5 (CL2.5). This module is designed for specific compact devices that require DDR memory.
Technical Information
| Capacity | 256MB |
| Memory Type | DDR SDRAM |
| Form Factor | Micro-DIMM |
Additional Specifications
| Speed | 266MHz |
| CAS Latency | CL2.5 |
| Configuration | 2Rx8 |
Product Description
The Samsung M328L3310ET0-CB0M2 is a 256MB DDR SDRAM module designed in the Micro-DIMM form factor. This extremely small form factor was used in highly compact devices, such as certain ultra-portable laptops or specialized embedded systems during the DDR memory era. The module operates at a speed of 266MHz (PC2100) and has a CAS Latency (CL) of 2.5, which are typical specifications for DDR memory of this generation. The 2Rx8 designation indicates that the module is dual-rank and uses x8 memory chips. This arrangement is common for memory modules and affects how the memory controller interacts with the RAM. As a standard DDR memory module, it is non-ECC (Error-Correcting Code), meaning it lacks the advanced error detection and correction features found in server-grade memory. This is typical for consumer devices where space and cost are primary considerations. This Samsung Micro-DIMM is a legacy component, primarily relevant for maintaining or upgrading older, very compact systems. Compatibility is highly specific, and these modules are not interchangeable with SODIMMs or standard DIMMs. Its purpose is to provide the basic RAM required for the system's operation in devices where space is at an absolute premium.
