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Samsung M321RYGA0PB0-CWM 96GB DDR5 5600MHz PC5-44800 ECC-RDIMM 2Rx4
- 96GB DDR5 SDRAM capacity
- Speed: 5600MHz (PC5-44800)
- ECC Registered DIMM (RDIMM)
- Dual Rank (2Rx4)
- Low voltage operation (1.1V)
- On-die ECC for enhanced data integrity
- Designed for next-generation servers
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Product Overview
Samsung M321RYGA0PB0-CWM is a high-capacity 96GB DDR5 ECC-RDIMM memory module designed for the latest generation of servers. It operates at 5600MHz with advanced features for performance and reliability.
Technical Information
| Part Number | M321RYGA0PB0-CWM |
| Brand | Samsung |
| Capacity | 96GB |
| Memory Type | DDR5 SDRAM |
| Form Factor | RDIMM (Registered DIMM) |
Additional Specifications
| Speed | 5600MHz (PC5-44800) |
| Rank | 2Rx4 (Dual Rank x4) |
| ECC | Yes (ECC-RDIMM) |
| Voltage | 1.1V |
| Features | On-die ECC, Power Management IC (PMIC) |
Product Description
The Samsung M321RYGA0PB0-CWM is a cutting-edge 96GB DDR5 Registered DIMM (RDIMM) memory module, engineered to deliver exceptional performance and capacity for the most demanding server and data center applications. As part of the DDR5 generation, it offers significant advancements over previous DDR technologies, including higher bandwidth, improved power efficiency, and enhanced data integrity features. This module operates at a blazing speed of 5600MHz (PC5-44800), providing substantial throughput for memory-intensive workloads such as large-scale virtualization, high-performance computing (HPC), and big data analytics. This RDIMM incorporates advanced features inherent to DDR5 technology, including on-die ECC (Error-Correcting Code) integrated directly within the DRAM chips, which provides a first layer of data integrity protection. Additionally, it features an integrated Power Management IC (PMIC) on the module itself, allowing for more granular voltage regulation and improved power efficiency compared to previous generations where power management was handled solely by the motherboard. The 2Rx4 configuration signifies a dual-rank design utilizing x4 DRAM devices, which can further optimize performance by allowing the memory controller to access data from different ranks in a staggered manner. Designed for enterprise-grade reliability, the M321RYGA0PB0-CWM is an ECC-RDIMM, meaning it includes full ECC capabilities to detect and correct single-bit errors and detect multi-bit errors, crucial for preventing data corruption and ensuring system stability in mission-critical server environments. Operating at a lower voltage of 1.1V compared to DDR4, it contributes to reduced power consumption and heat generation within dense server configurations. This module represents a significant leap forward in memory technology, enabling next-generation servers to achieve unprecedented levels of performance and efficiency.



