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Samsung M321RBGA0B40-CWKBH 256GB DDR5-4800MHz RDIMM 8Rx4 CL40 Memory
- Capacity: 256GB
- Memory Type: DDR5 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 4800MHz
- CAS Latency: CL40
- Configuration: 8Rx4 (Octal Rank, x4 organization)
- Voltage: 1.1V
- ECC: ECC Registered
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Product Overview
The Samsung M321RBGA0B40-CWKBH is a massive 256GB DDR5 Registered DIMM (RDIMM) memory module. It operates at a blazing 4800MHz with CL40 timings and features an 8Rx4 configuration, designed for the most demanding enterprise server applications.
Technical Information
| Capacity | 256GB |
| Memory Type | DDR5 SDRAM |
| Form Factor | RDIMM |
| Speed | 4800MHz |
Additional Specifications
| CAS Latency | CL40 |
| Rank | 8Rx4 |
| Voltage | 1.1V |
| ECC | ECC Registered |
Product Description
This Samsung 256GB DDR5 RDIMM, SKU M321RBGA0B40-CWKBH, represents the pinnacle of server memory technology, offering unprecedented capacity and speed for the most demanding enterprise workloads. Operating at an impressive 4800MHz, it delivers exceptional bandwidth crucial for data-intensive applications, high-performance computing, and large-scale virtualization. The 8Rx4 configuration signifies an octal-rank design with a x4 data width per rank. This advanced organization, combined with DDR5's architectural improvements, allows for maximum memory density and performance optimization within server systems. As a Registered DIMM, it incorporates an onboard register to buffer command and address signals, significantly reducing the electrical load on the memory controller and enabling the support of such massive capacities. With a CAS latency of CL40, this module balances its high speed with robust stability. It features ECC Registered capabilities, essential for ensuring data integrity and system reliability in mission-critical server environments. The lower operating voltage of 1.1V for DDR5 also contributes to improved power efficiency compared to previous generations.
