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Samsung M321RAGA0B20-CWKPH 128GB DDR5-4800MHz RDIMM 4Rx4 CL40 Memory
- 128GB DDR5 memory capacity
- 4800MHz clock speed
- CL40 CAS Latency
- 4Rx4 rank configuration (Quad Rank, x4 data width)
- RDIMM (Registered DIMM) for enhanced stability and performance
- ECC (Error-Correcting Code) support for data integrity
- Designed for servers and high-performance workstations
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Typically 1-2 handling + 3-7 transit days
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Product Overview
The Samsung M321RAGA0B20-CWKPH is a high-performance 128GB DDR5 Registered DIMM (RDIMM) memory module. Operating at 4800MHz with a CL40 latency, it is designed for demanding server and workstation applications requiring significant memory bandwidth and capacity.
Technical Information
| Capacity | 128GB |
| Memory Type | DDR5 |
| Speed | 4800MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 4Rx4 |
| CAS Latency | CL40 |
| ECC | Yes |
Product Description
This Samsung memory module represents the cutting edge of DDR5 technology, offering a substantial 128GB capacity. The 4800MHz speed ensures rapid data transfer, crucial for memory-intensive tasks such as large-scale data analysis, virtualization, and complex simulations. The 4Rx4 rank configuration indicates a high-density module, providing more memory channels per DIMM for improved performance in multi-processor systems. The module is a Registered DIMM (RDIMM), which includes a register chip that buffers command and address signals. This reduces electrical load on the memory controller, allowing for higher memory capacities and improved signal integrity, leading to greater system stability. Furthermore, the inclusion of ECC (Error-Correcting Code) functionality detects and corrects single-bit errors, preventing data corruption and ensuring the reliability required for mission-critical applications. With its combination of high capacity, speed, and advanced features like RDIMM and ECC, the M321RAGA0B20-CWKPH is an ideal choice for enterprise-grade servers, high-performance computing clusters, and workstations that demand maximum memory performance and reliability. It is engineered to meet the rigorous demands of modern data centers and professional environments.
