Safe Checkout
Secure Payments
Fast Delivery
Order Today
Free Shipping
Across the US
Easy Returns
Hassle-Free
Samsung M321R4GA3BB6-CQKVG 32GB DDR5-4800MHz RDIMM 2Rx4 CL40 Memory
- Capacity: 32GB
- Memory Type: DDR5 RDIMM
- Speed: 4800MHz
- CAS Latency: CL40
- Rank Configuration: 2Rx4 (Dual Rank x4)
- ECC Support: Yes (Registered DIMM)
- Voltage: 1.1V
- Form Factor: DIMM
Free U.S. Ground Shipping
Typically 1-2 handling + 3-7 transit days
Purchase orders accepted
For government, enterprise, data center, and small business customers.
Bulk Purchase Inquiry
Volume pricing and availability
Product Overview
The Samsung M321R4GA3BB6-CQKVG is a 32GB DDR5 RDIMM memory module designed for high-performance computing. It operates at 4800MHz with a 2Rx4 rank configuration and CL40 latency, offering substantial bandwidth and capacity for demanding server and workstation tasks. This module supports ECC for enhanced data integrity.
Technical Information
| Memory Type | DDR5 RDIMM |
| Capacity | 32GB |
| Speed | 4800MHz |
| CAS Latency | CL40 |
Additional Specifications
| Rank | 2Rx4 |
| Voltage | 1.1V |
| ECC | Yes |
| Form Factor | DIMM |
Product Description
This 32GB DDR5 RDIMM from Samsung, SKU M321R4GA3BB6-CQKVG, represents the latest generation of server memory technology, designed for maximum performance and efficiency. DDR5 introduces significant architectural enhancements over DDR4, including higher data rates, improved power management, and increased memory density capabilities. The RDIMM (Registered DIMM) form factor includes a register chip that buffers command and address signals, reducing the electrical load on the memory controller and enabling higher memory capacities and speeds. The module operates at a rapid 4800MHz speed, providing substantial bandwidth crucial for data-intensive applications. It features a dual-rank configuration (2Rx4), meaning it has two ranks of memory chips, each with four internal banks. This dual-rank design can improve performance by allowing the memory controller to access different ranks concurrently, enhancing data throughput. The CAS latency is CL40, which is typical for DDR5 modules at these high frequencies, balancing speed with responsiveness. With its 32GB capacity and integrated ECC (Error-Correcting Code) support, this memory module is built for reliability and data integrity in demanding server and workstation environments. It is ideal for applications such as large-scale data analytics, AI/ML workloads, high-performance computing, and complex virtualization scenarios where both speed and stability are paramount.
