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NEC N8102-498 32GB Kit (2x16GB) DDR3-1600MHz RDIMM 2Rx4 CL11 Memory

NEC N8102-498 32GB Kit (2x16GB) DDR3-1600MHz RDIMM 2Rx4 CL11 Memory

SKU:N8102-498
  • Kit Capacity: 32GB (2x16GB)
  • Memory Type: DDR3 SDRAM
  • Speed: 1600MHz (PC3-12800)
  • Form Factor: RDIMM (Registered DIMM)
  • Configuration: 2Rx4 (Dual Rank, x4)
  • Latency: CL11
  • Voltage: 1.5V
  • ECC: Yes (Error-Correcting Code)
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Product Overview

The NEC N8102-498 is a 32GB memory kit, consisting of two 16GB DDR3-1600MHz Registered DIMMs (RDIMMs). Each module is 2Rx4 with CL11 latency, designed for high-capacity and high-performance server environments.

Technical Information

Kit Capacity32GB
Module Capacity16GB
Number of Modules2
Memory TypeDDR3 SDRAM
Speed1600MHz

Additional Specifications

Form FactorRDIMM
Rank2Rx4
CAS LatencyCL11
Voltage1.5V
ECCYes

Product Description

This NEC N8102-498 kit provides a total of 32GB of DDR3 memory, comprised of two 16GB Registered DIMM (RDIMM) modules. Operating at a speed of 1600MHz, these modules offer high bandwidth suitable for demanding server workloads. The RDIMM design includes an onboard register to buffer command and address signals, which is crucial for system stability and allows for higher memory capacities. Each 16GB module features a 2Rx4 configuration, meaning it is dual-ranked with x4 DRAM devices per rank. This configuration is often chosen for its performance characteristics in server environments. The CL11 CAS Latency provides a balance between speed and capacity. As with all server-grade memory, these modules support ECC (Error-Correcting Code) to detect and correct memory errors, ensuring data integrity and system reliability. The NEC N8102-498 kit is designed for high-performance NEC servers and workstations that require significant memory capacity. The dual-module configuration enables dual-channel operation, potentially doubling memory bandwidth when installed in compatible slots. This kit is ideal for applications such as virtualization, large databases, high-performance computing, and other memory-intensive enterprise tasks.

Condition:New

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