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Micron MTC10F1084S1RC48B 16GB DDR5-4800MHz RDIMM 1Rx8 CL40 Memory
- Capacity: 16GB
- Memory Type: DDR5
- Form Factor: RDIMM (Registered DIMM)
- Speed: 4800MHz
- CAS Latency (CL): 40
- Configuration: 1Rx8 (Single Rank x8)
- Voltage: Standard DDR5 voltage
- Designed for server and workstation environments
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Product Overview
The Micron MTC10F1084S1RC48B is a 16GB DDR5 Registered DIMM (RDIMM) memory module. It operates at a speed of 4800MHz with a CAS Latency of 40, featuring a 1Rx8 configuration, making it suitable for high-performance server and workstation applications requiring reliable and fast memory.
Technical Information
| Brand | Micron |
| Part Number | MTC10F1084S1RC48B |
| Capacity | 16GB |
| Memory Type | DDR5 SDRAM |
| Form Factor | RDIMM |
Additional Specifications
| Speed | 4800MHz |
| CAS Latency | CL40 |
| Rank | 1Rx8 |
| ECC | Yes (Registered ECC) |
Product Description
The Micron MTC10F1084S1RC48B represents a significant advancement in memory technology, offering 16GB of DDR5 capacity in a Registered DIMM (RDIMM) form factor. DDR5 technology brings substantial improvements in bandwidth, power efficiency, and overall performance compared to previous generations. This module is engineered for demanding enterprise environments, including servers and high-performance workstations, where memory speed and reliability are paramount for efficient operation and data processing. Operating at a clock speed of 4800MHz, this memory module provides rapid data transfer rates, which is crucial for applications that are memory-intensive, such as large databases, virtualization, scientific simulations, and complex data analytics. The CAS Latency of CL40, while higher than some lower-speed modules, is optimized for the DDR5 architecture to deliver excellent overall performance. The 1Rx8 configuration indicates a single rank of memory chips, each with eight data lines, which is a common and efficient setup for many server motherboards. As an RDIMM, the MTC10F1084S1RC48B includes an onboard register that buffers address and command signals between the memory controller and the DRAM chips. This buffering reduces electrical load on the memory controller, allowing for more memory modules to be installed per channel and increasing system stability, especially in systems with a large number of memory slots. The integrated ECC (Error-Correcting Code) functionality further enhances data integrity by detecting and correcting single-bit errors, which is essential for mission-critical applications where data accuracy is non-negotiable.



