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Micron MTA9ASF51272PZ-2G6 4GB DDR4-2666MHz RDIMM 1Rx8 CL19 Memory

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Micron MTA9ASF51272PZ-2G6 4GB DDR4-2666MHz RDIMM 1Rx8 CL19 Memory

SKU MTA9ASF51272PZ-2G6
Brand Micron
  • Capacity: 4GB
  • Type: DDR4 SDRAM
  • Speed: 2666MHz (PC4-21300)
  • Form Factor: RDIMM (Registered DIMM)
  • Configuration: 1Rx8 (Single Rank x8)
  • Latency: CL19
  • Manufactured by Micron, a leading memory provider.
  • Suitable for a wide range of server and workstation platforms.
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Key specifications

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Capacity
4GB
Memory Type
DDR4 SDRAM
Speed
2666MHz
Form Factor
RDIMM
Rank
1Rx8
CAS Latency
CL19

Product details

The Micron MTA9ASF51272PZ-2G6 is a 4GB DDR4-2666MHz Registered DIMM (RDIMM) memory module. It features a 1Rx8 configuration and CL19 latency, designed for server and workstation applications requiring reliable memory.

Technical Information

Capacity4GB
Memory TypeDDR4 SDRAM
Speed2666MHz
Form FactorRDIMM

Additional Specifications

Rank1Rx8
CAS LatencyCL19
ManufacturerMicron

Description

The Micron MTA9ASF51272PZ-2G6 is a 4GB DDR4 Registered DIMM (RDIMM) memory module, operating at a speed of 2666MHz. This module is designed for server and workstation environments where stability and performance are critical. The RDIMM architecture includes a register chip that helps to reduce the electrical load on the memory controller, enabling higher memory capacities and improved signal integrity. This specific module is configured as 1Rx8, indicating it is single-rank with eight data bits per chip. This configuration is common for many server memory applications. It has a CAS Latency (CL) of 19, which is a standard timing for DDR4 memory at this speed, ensuring efficient data transfer between the memory and the processor. With 4GB of capacity and DDR4-2666MHz speed, the MTA9ASF51272PZ-2G6 provides essential memory for a variety of computing tasks. It is a reliable choice for upgrading or populating memory in servers and workstations that support DDR4 RDIMMs, contributing to overall system responsiveness and stability.

Condition: Refurbished

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