Micron MTA9ASF51272AZ-2G6B1ZG 4GB DDR4-2666MHz UDIMM 1Rx8 CL19 Memory

SKU MTA9ASF51272AZ-2G6B1ZG

Brand Micron

Capacity: 4GB
Type: DDR4 UDIMM
Speed: 2666MHz
Rank: 1Rx8
Latency: CL19
Voltage: 1.2V
ECC: Non-ECC

Available to order

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Key specifications

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Memory Type: DDR4 SDRAM
Form Factor: UDIMM
Capacity: 4GB
Speed: 2666MHz
CAS Latency: CL19
Rank: 1Rx8

Product details

The Micron MTA9ASF51272AZ-2G6B1ZG is a 4GB DDR4 UDIMM memory module operating at 2666MHz with a CL19 latency. It features a 1Rx8 rank configuration, suitable for general-purpose computing and entry-level servers.

Technical Information

Memory Type	DDR4 SDRAM
Form Factor	UDIMM
Capacity	4GB
Speed	2666MHz

Additional Specifications

CAS Latency	CL19
Rank	1Rx8
Voltage	1.2V
ECC Support	No

Description

This Micron memory module, identified by SKU MTA9ASF51272AZ-2G6B1ZG, is a 4GB DDR4 Unbuffered DIMM (UDIMM) designed for a variety of computing applications. It operates at a speed of 2666MHz, offering a good balance of performance and power efficiency for everyday computing tasks. The module features a 1Rx8 rank configuration, indicating a single-rank design with eight bits per chip. This configuration is common for UDIMMs and is suitable for standard desktop computers, workstations, and entry-level servers. With a CAS latency of CL19 and a standard 1.2V operating voltage, this memory module provides reliable performance for general-purpose computing. It is a cost-effective solution for upgrading existing systems or for use in new builds where high capacity is not the primary requirement.

Condition: Refurbished