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Micron MTA9ASF51272AZ-2G6B1ZG 4GB DDR4-2666MHz UDIMM 1Rx8 CL19 Memory

Micron MTA9ASF51272AZ-2G6B1ZG 4GB DDR4-2666MHz UDIMM 1Rx8 CL19 Memory

SKU:MTA9ASF51272AZ-2G6B1ZG
  • Capacity: 4GB
  • Type: DDR4 UDIMM
  • Speed: 2666MHz
  • Rank: 1Rx8
  • Latency: CL19
  • Voltage: 1.2V
  • ECC: Non-ECC
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Product Overview

The Micron MTA9ASF51272AZ-2G6B1ZG is a 4GB DDR4 UDIMM memory module operating at 2666MHz with a CL19 latency. It features a 1Rx8 rank configuration, suitable for general-purpose computing and entry-level servers.

Technical Information

Memory TypeDDR4 SDRAM
Form FactorUDIMM
Capacity4GB
Speed2666MHz

Additional Specifications

CAS LatencyCL19
Rank1Rx8
Voltage1.2V
ECC SupportNo

Product Description

This Micron memory module, identified by SKU MTA9ASF51272AZ-2G6B1ZG, is a 4GB DDR4 Unbuffered DIMM (UDIMM) designed for a variety of computing applications. It operates at a speed of 2666MHz, offering a good balance of performance and power efficiency for everyday computing tasks. The module features a 1Rx8 rank configuration, indicating a single-rank design with eight bits per chip. This configuration is common for UDIMMs and is suitable for standard desktop computers, workstations, and entry-level servers. With a CAS latency of CL19 and a standard 1.2V operating voltage, this memory module provides reliable performance for general-purpose computing. It is a cost-effective solution for upgrading existing systems or for use in new builds where high capacity is not the primary requirement.

Condition:Refurbished

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