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Micron MTA36ASF2G72PZ-3G2F2TI 32GB DDR4-3200MHz PC4-25600 ECC Registered CL22 288-Pin DIMM Dual Rank...

SKU MTA36ASF2G72PZ-3G2F2TI
Brand Micron
  • 32GB DDR4 SDRAM
  • 3200MHz Speed (PC4-25600)
  • ECC Registered DIMM
  • CL22 Latency
  • Dual Rank (2Rx8)
  • 288-Pin
  • 1.2V Voltage
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Key specifications

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Capacity
32GB
Memory Type
DDR4 SDRAM
Form Factor
RDIMM
Speed
3200MHz
Module Type
PC4-25600
Rank
2Rx8 (Dual Rank)

Product details

This Micron 32GB DDR4 Registered DIMM is a high-capacity memory module designed for servers and workstations. It operates at 3200MHz with a CL22 latency and features a dual-rank configuration for enhanced performance.

Technical Information

Capacity32GB
Memory TypeDDR4 SDRAM
Form FactorRDIMM
Speed3200MHz
Module TypePC4-25600

Additional Specifications

Rank2Rx8 (Dual Rank)
LatencyCL22
ECCRegistered ECC
Voltage1.2V
Pins288-Pin

Description

The Micron MTA36ASF2G72PZ-3G2F2TI is a high-performance 32GB DDR4 Registered DIMM (RDIMM) module, engineered to deliver superior capacity and speed for demanding server and workstation environments. Operating at a frequency of 3200MHz, which corresponds to a PC4-25600 data rate, this module provides substantial bandwidth for data-intensive applications. The inclusion of ECC (Error-Correcting Code) ensures data integrity and system reliability, making it suitable for mission-critical operations. This module features a dual-rank (2Rx8) organization, meaning it has two independent sets of memory banks, which can improve performance by allowing the memory controller to access different ranks concurrently. The CAS Latency (CL) is rated at 22, indicating the number of clock cycles required for the memory to respond to a request. This combination of speed, capacity, and rank configuration makes it an ideal choice for servers handling virtualization, database management, and complex scientific simulations. Built with Micron's advanced manufacturing processes, the MTA36ASF2G72PZ-3G2F2TI adheres to the standard 288-pin configuration for DDR4 DIMMs and operates at a voltage of 1.2V, contributing to power efficiency. Its robust design and specifications are tailored to meet the rigorous demands of enterprise-level computing, offering a reliable and high-throughput memory solution for modern data centers.

Condition: Refurbished

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