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Micron MTA36ASF2G72PZ-2G3 16GB DDR4-2400MHz RDIMM 2Rx4 CL17 Memory

SKU MTA36ASF2G72PZ-2G3
Brand Micron
  • Capacity: 16GB
  • Type: DDR4 RDIMM (Registered DIMM)
  • Speed: 2400MHz
  • Latency: CL17
  • Configuration: 2Rx4 (Dual Rank x4)
  • Voltage: 1.2V
  • ECC: Yes (Error-Correcting Code)
  • Form Factor: DIMM
In Stock
$162.38

Was $190.68 · You save $28.30

Key specifications

See full specs ↓
Memory Type
DDR4 SDRAM
Form Factor
RDIMM
Capacity
16GB
Speed
2400MHz
CAS Latency
CL17
Rank
2Rx4

Product details

The Micron MTA36ASF2G72PZ-2G3 is a 16GB DDR4 RDIMM memory module designed for servers and high-performance workstations. It operates at a speed of 2400MHz with a CAS latency of 17, providing efficient data transfer for demanding applications. This module features a 2Rx4 rank configuration, ensuring optimal performance and reliability in enterprise environments.

Technical Information

Memory TypeDDR4 SDRAM
Form FactorRDIMM
Capacity16GB
Speed2400MHz

Additional Specifications

CAS LatencyCL17
Rank2Rx4
Voltage1.2V
ECCRegistered ECC

Description

The Micron MTA36ASF2G72PZ-2G3 is engineered to meet the rigorous demands of modern server and workstation environments. Its 16GB capacity, coupled with DDR4 technology, delivers substantial bandwidth for memory-intensive tasks such as virtualization, large database operations, and complex scientific simulations. The 2400MHz clock speed ensures rapid data access, while the CL17 latency strikes a balance between responsiveness and efficiency. The 2Rx4 configuration signifies that the memory module is organized into two ranks, each with four data lines per chip. This dual-rank design can enhance performance by allowing the memory controller to access data from different ranks concurrently, effectively increasing the overall data throughput. This makes it particularly well-suited for multi-processor systems and applications that benefit from higher memory bandwidth. As a Registered DIMM (RDIMM), this module incorporates a register chip that buffers command and address signals between the memory controller and the DRAM chips. This buffering reduces electrical load on the memory controller, enabling higher memory capacities and improved signal integrity, which is crucial for system stability and reliability in enterprise-grade hardware. The inclusion of ECC (Error-Correcting Code) further enhances data integrity by detecting and correcting single-bit errors.

Condition: Refurbished

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