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Micron MTA18ASF4G72PDZ-2G9R 32GB DDR4-2933MHz RDIMM 2Rx4 CL21 Memory
- Capacity: 32GB
- Type: DDR4 SDRAM
- Speed: 2933MHz (PC4-23466)
- Form Factor: RDIMM (Registered DIMM)
- Configuration: 2Rx4 (Dual Rank x4)
- Voltage: 1.2V
- ECC: Yes (Registered ECC)
- CAS Latency: CL21
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Product Overview
The Micron MTA18ASF4G72PDZ-2G9R is a 32GB DDR4-2933MHz RDIMM memory module. It features a 2Rx4 configuration and operates at 1.2V. This Registered DIMM is designed for high-performance servers requiring robust data integrity.
Technical Information
| Memory Capacity | 32GB |
| Memory Type | DDR4 SDRAM |
| Memory Speed | 2933MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx4 |
| CAS Latency | CL21 |
| Voltage | 1.2V |
| ECC | Registered ECC |
Product Description
The Micron MTA18ASF4G72PDZ-2G9R is a high-capacity 32GB memory module engineered for demanding server and enterprise environments. It utilizes DDR4 SDRAM technology, operating at a rapid speed of 2933MHz (PC4-23466), which provides substantial bandwidth for memory-intensive applications such as virtualization, large databases, and high-performance computing. The module's configuration is 2Rx4, indicating dual rank with four memory chips per rank. This configuration can offer performance advantages by allowing the memory controller to access different ranks and chip selects more efficiently, potentially improving overall system throughput and latency. As a Registered DIMM (RDIMM), this module includes an onboard register that buffers command and address signals between the memory controller and the DRAM chips. This buffering reduces the electrical load on the memory controller, enabling servers to support higher memory capacities and maintain signal integrity, which is crucial for stability in complex systems. Furthermore, the MTA18ASF4G72PDZ-2G9R features Error-Correcting Code (ECC) functionality. ECC detects and corrects single-bit errors in real-time, ensuring data integrity and system reliability – a critical requirement for mission-critical server operations where data accuracy and uptime are paramount. Operating at the standard DDR4 voltage of 1.2V, this module contributes to power efficiency and reduced heat generation within the server. It has a CAS Latency (CL) of 21. With its combination of high capacity, fast speed, dual-rank x4 design, RDIMM architecture, and ECC support, the MTA18ASF4G72PDZ-2G9R is a robust and high-performance memory solution tailored for the rigorous demands of modern data centers and enterprise-grade servers.


