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Micron MTA18ASF2G72PDZ-3G2J3UI 16GB DDR4-3200 MHz ECC Registered
- 16GB DDR4 Memory.
- ECC (Error-Correcting Code) Registered DIMM.
- Speed: 3200MHz.
- Designed for enhanced data integrity and error detection/correction.
- Suitable for critical server environments.
- Micron quality and performance.
- Supports high memory capacities in servers.
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Typically 1-2 handling + 3-7 transit days
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For government, enterprise, data center, and small business customers.
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Volume pricing and availability
Product Overview
The Micron MTA18ASF2G72PDZ-3G2J3UI is a 16GB DDR4 ECC Registered memory module operating at 3200MHz. It is designed for servers requiring high reliability and data integrity.
Technical Information
| Memory Type | DDR4 SDRAM |
| Capacity | 16GB |
| Form Factor | RDIMM |
| ECC | Yes |
Additional Specifications
| Speed | 3200MHz |
| Manufacturer | Micron |
| Part Number | MTA18ASF2G72PDZ-3G2J3UI |
Product Description
The Micron MTA18ASF2G72PDZ-3G2J3UI is a 16GB DDR4 ECC Registered DIMM (RDIMM) module, engineered to provide superior data integrity and reliability for server applications. The inclusion of ECC technology allows the module to detect and correct single-bit memory errors on the fly, significantly reducing the risk of data corruption and system crashes, which is paramount in enterprise environments. Operating at a high speed of 3200MHz, this module delivers substantial memory bandwidth, essential for handling demanding workloads such as large databases, virtualization platforms, and complex scientific simulations. As an RDIMM, it incorporates a register chip that buffers command and address signals, enabling higher memory densities and improved signal integrity, allowing servers to support larger total memory configurations. This specific part number, MTA18ASF2G72PDZ-3G2J3UI, signifies a particular configuration or batch from Micron, a trusted manufacturer known for its high-performance memory solutions. It is an ideal choice for servers where uptime and data accuracy are critical, ensuring consistent performance and minimizing the impact of potential memory-related issues.
