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Micron MTA18ASF1G72PZ-2G1A2II 8GB DDR4-2133MHz RDIMM 1Rx4 CL15 Memory
- Capacity: 8GB
- Memory Type: DDR4 SDRAM
- Form Factor: RDIMM
- Speed: 2133MHz (PC4-17000)
- CAS Latency: CL15
- Rank: 1Rx4 (Single Rank x4)
- Voltage: 1.2V
- ECC: Registered
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Product Overview
The Micron MTA18ASF1G72PZ-2G1A2II is an 8GB DDR4 RDIMM memory module, operating at 2133MHz with a CL15 latency. Designed for modern server and workstation platforms, it features a 1Rx4 rank configuration for efficient data transfer. This module provides enhanced performance and reliability for demanding computing tasks.
Technical Information
| Memory Size | 8GB |
| Memory Type | DDR4 SDRAM |
| Speed | 2133MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 1Rx4 |
| CAS Latency | CL15 |
| Voltage | 1.2V |
| ECC | Registered |
Product Description
The Micron MTA18ASF1G72PZ-2G1A2II is an 8GB DDR4 Registered DIMM (RDIMM) module, engineered for the performance and efficiency demands of contemporary server and workstation environments. Operating at a speed of 2133MHz, it offers improved bandwidth compared to previous DDR generations, facilitating faster data processing for applications such as virtualization, database management, and cloud computing. The module's CL15 CAS Latency strikes a balance between speed and stability, ensuring efficient operation. This memory module features a 1Rx4 rank configuration, indicating a single rank with four memory chips per DRAM die. This design is optimized for performance and compatibility within modern server architectures. As an RDIMM, it includes an onboard register that buffers command and address signals, reducing the electrical load on the memory controller. This is crucial for system stability, especially in systems populated with multiple memory modules, and allows for higher memory capacities. Built to Micron's exacting standards, this 8GB DDR4 RDIMM provides the reliability and data integrity essential for mission-critical operations. It supports ECC (Error-Correcting Code) functionality, which is vital for detecting and correcting memory errors, thereby preventing system crashes and data corruption. The lower operating voltage of 1.2V also contributes to improved power efficiency compared to DDR3 modules.
