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Micron MT9KSF51272PZ-1G6E2HE 4GB DDR3-1600MHz RDIMM 1Rx8 CL11 Memory
- Capacity: 4GB
- Type: DDR3 SDRAM
- Speed: 1600MHz (PC3-12800R)
- Form Factor: RDIMM (Registered DIMM)
- Configuration: 1Rx8 (Single Rank, x8)
- Latency: CL11
- Brand: Micron
- Designed for server applications
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Key specifications
See full specs ↓- Capacity
- 4GB
- Type
- DDR3 SDRAM
- Speed
- 1600MHz
- Form Factor
- RDIMM
- Rank
- 1Rx8
- Latency
- CL11
Product details
The Micron MT9KSF51272PZ-1G6E2HE is a 4GB DDR3-1600MHz RDIMM memory module. It is a Registered DIMM (RDIMM) with a 1Rx8 configuration, designed for servers and workstations requiring reliable system memory at a higher clock speed.
Technical Information
| Capacity | 4GB |
| Type | DDR3 SDRAM |
| Speed | 1600MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 1Rx8 |
| Latency | CL11 |
| Brand | Micron |
| Model | MT9KSF51272PZ-1G6E2HE |
Description
The Micron MT9KSF51272PZ-1G6E2HE is a 4GB DDR3 Registered DIMM (RDIMM) operating at a speed of 1600MHz. This module is designed for server and workstation environments that require stable and efficient memory performance. The RDIMM design includes an onboard buffer that helps reduce the electrical load on the memory controller, enabling greater memory capacity and improved system stability. This specific module is configured as 1Rx8, meaning it is single-ranked with eight memory chips per rank. Single-ranked modules can sometimes offer advantages in specific memory access patterns. The CL11 latency indicates the timing characteristics of the memory operations. Built by Micron, a reputable memory manufacturer, this module ensures high quality and reliability for mission-critical applications. It is suitable for upgrading existing server memory or for new builds that support DDR3-1600MHz RDIMMs, providing a cost-effective way to increase system performance.
Condition: Refurbished
Free U.S. ground shipping
Typically 1–2 days handling, 3–7 days in transit.
Purchase orders accepted
Government, enterprise, data center and small business.
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