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Micron MT9KSF51272AZ-1G6 4GB DDR3-1600MHz UDIMM 1Rx8 CL11 Memory
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1600MHz (PC3-12800)
- Form Factor: UDIMM (Unbuffered DIMM)
- Rank: 1Rx8 (Single Rank x8)
- CAS Latency: CL11
- Voltage: 1.5V
- ECC: Non-ECC
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Product Overview
The Micron MT9KSF51272AZ-1G6 is a 4GB DDR3-1600MHz UDIMM memory module. It is an unbuffered DIMM with a clock speed of 1600MHz and a CAS latency of CL11.
Technical Information
| Product Type | Memory Module |
| Memory Technology | DDR3 SDRAM |
| Capacity | 4 GB |
| Speed | 1600 MHz |
Additional Specifications
| Form Factor | UDIMM |
| Rank | 1Rx8 |
| CAS Latency | CL11 |
Product Description
The Micron MT9KSF51272AZ-1G6 is a 4 Gigabyte (GB) DDR3 Synchronous Dynamic Random-Access Memory (SDRAM) module. It operates at a speed of 1600MHz, commonly referred to as PC3-12800, providing a substantial increase in data transfer rates compared to earlier DDR generations. This speed is crucial for enhancing system performance in applications that are memory-intensive. This module is configured as an Unbuffered DIMM (UDIMM), which means it does not have an onboard buffer chip. UDIMMs are typically used in desktop computers and some entry-level servers. The 1Rx8 designation indicates that it is a single-rank module with an organization of eight memory chips per rank, contributing to its overall efficiency and compatibility with various motherboard chipsets. With a CAS Latency (CL) of 11, the MT9KSF51272AZ-1G6 offers a balance between speed and timing. It is a non-ECC (Error-Correcting Code) module, meaning it does not include the extra circuitry to detect and correct memory errors, making it suitable for environments where data integrity is not as critical as in enterprise-grade servers. The standard operating voltage for DDR3 is 1.5V.
