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Micron MT9KBZF51272PKIZ-1G4E1 4GB DDR3-1333MHz VLP Mini-RDIMM Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: Mini-RDIMM (Registered DIMM)
- Speed: 1333MHz
- Module Type: 2Rx8 (Dual Rank, x8 organization)
- CAS Latency: CL9
- Voltage: Standard DDR3 voltage
- Designed for server environments with space constraints
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Product Overview
The Micron MT9KBZF51272PKIZ-1G4E1 is a 4GB DDR3 Mini-RDIMM memory module operating at 1333MHz. It features a 2Rx8 organization and CL9 latency, designed for servers and workstations requiring compact and reliable memory.
Technical Information
| Capacity | 4GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1333MHz |
| Form Factor | Mini-RDIMM |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL9 |
| Voltage | 1.5V (typical) |
Product Description
This Micron 4GB DDR3 memory module, identified by SKU MT9KBZF51272PKIZ-1G4E1, is a Mini-Registered DIMM (Mini-RDIMM) designed for server and workstation applications where space efficiency is critical. Operating at a speed of 1333MHz with a CAS Latency of CL9, it provides a balance of performance and power consumption suitable for demanding computing tasks. The module's 2Rx8 organization signifies a dual-rank configuration, where each rank consists of eight memory chips. This configuration can enhance memory bandwidth and performance, particularly in systems that support dual-rank operation. The Mini-RDIMM form factor is smaller than standard RDIMMs, making it ideal for densely packed server chassis or systems with limited internal space, such as blade servers or compact workstations. Micron's commitment to quality ensures that the MT9KBZF51272PKIZ-1G4E1 meets stringent reliability standards. This memory module is engineered to provide stable and consistent performance, crucial for mission-critical applications and continuous operation in enterprise environments. Its DDR3 technology offers improved efficiency and bandwidth over older memory standards, contributing to overall system performance.
