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Micron MT9JSF12872PZ-1G4G1HE 1GB DDR3-1333MHz RDIMM 1Rx8 CL9 Memory
- Capacity: 1GB
- Type: DDR3 Synchronous DRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1333MHz (PC3-10600)
- Organization: 1Rx8 (Single Rank, 8-bit)
- Latency: CL9
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
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Product Overview
This Micron memory module is a 1GB DDR3 RDIMM, operating at 1333MHz with an 8-bit rank and CL9 latency. It is designed for server and workstation applications requiring reliable and high-performance memory.
Technical Information
| Capacity | 1GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 1Rx8 |
| CAS Latency | CL9 |
| Voltage | 1.5V |
| ECC | Yes |
Product Description
The Micron MT9JSF12872PZ-1G4G1HE is a high-quality 1GB DDR3 Registered DIMM (RDIMM) module, engineered for enhanced performance and stability in server and workstation environments. Operating at a speed of 1333MHz, it provides efficient data transfer rates suitable for demanding computing tasks. The 1Rx8 organization signifies a single rank with an 8-bit data width per chip, contributing to its overall performance characteristics. This memory module features a CAS Latency (CL) of 9, indicating the number of clock cycles required to access data from the memory. The RDIMM form factor includes an onboard register that buffers command and address signals, reducing electrical load on the memory controller and allowing for higher memory capacities and speeds. This makes it ideal for systems that require significant amounts of memory. Furthermore, the MT9JSF12872PZ-1G4G1HE incorporates Error-Correcting Code (ECC) functionality. ECC memory can detect and correct common types of internal data corruption, significantly improving data integrity and system reliability. This feature is crucial for mission-critical applications where data accuracy is paramount, such as in enterprise servers, databases, and scientific computing.
