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Micron MT9HTF12872FZ-667HZN8ES 1GB DDR2-667MHz FB-DIMM 1Rx8 CL5 Memory
- Capacity: 1GB
- Type: DDR2 SDRAM
- Form Factor: FB-DIMM (Fully Buffered DIMM)
- Speed: 667MHz
- CAS Latency: CL5
- Rank: 1Rx8
- Voltage: Standard DDR2 voltage
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Micron MT9HTF12872FZ-667HZN8ES is a 1GB DDR2 Fully Buffered DIMM (FB-DIMM) memory module. It operates at 667MHz with a CAS Latency of 5, designed for server systems requiring high memory density and reliability.
Technical Information
| Memory Type | DDR2 SDRAM |
| Capacity | 1GB |
| Form Factor | FB-DIMM |
| Speed | 667MHz |
Additional Specifications
| CAS Latency | CL5 |
| Rank | 1Rx8 |
| ECC | Yes |
Product Description
This Micron 1GB DDR2 FB-DIMM, identified by SKU MT9HTF12872FZ-667HZN8ES, is a memory module designed for server and workstation platforms that utilize the Fully Buffered DIMM architecture. FB-DIMMs are characterized by the presence of an Advanced Memory Buffer (AMB) chip on each module, which serializes data transfers, enabling higher memory capacities and improved signal integrity compared to traditional Registered DIMMs. The module operates at a frequency of 667MHz with a CAS Latency of CL5. This combination provides a solid balance of speed and responsiveness, suitable for a wide range of server applications, including virtualization, database hosting, and enterprise resource planning (ERP) systems. The 1Rx8 configuration indicates a single-rank module with an eight-bit data width per DRAM chip, a common specification for server memory. As an FB-DIMM, this memory module inherently supports ECC (Error-Correcting Code) functionality, which is critical for maintaining data integrity in server environments. The AMB chip on the module works in conjunction with the system's memory controller to detect and correct memory errors, thereby enhancing system stability and reliability. This makes the MT9HTF12872FZ-667HZN8ES a dependable choice for mission-critical applications.
