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Micron MT9HTF12872FY-80EEZD4ES 1GB DDR2-800MHz FB-DIMM 1Rx8 CL6 Memory
- 1GB DDR2 SDRAM Memory Module
- FB-DIMM (Fully Buffered DIMM) form factor
- Speed: 800MHz (PC2-6400)
- CAS Latency: CL6
- Configuration: 1Rx8 (Single Rank, x8 data width)
- Manufactured by Micron
- Designed for server and workstation applications
- Features advanced error detection and correction
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Product Overview
The Micron MT9HTF12872FY-80EEZD4ES is a 1GB DDR2 SDRAM FB-DIMM memory module. It operates at 800MHz with a CL6 latency, designed for servers and high-performance workstations requiring reliable memory.
Technical Information
| Memory Type | DDR2 SDRAM |
| Capacity | 1GB |
| Form Factor | FB-DIMM |
| Speed | 800MHz |
Additional Specifications
| CAS Latency | CL6 |
| Rank | 1Rx8 |
| Manufacturer | Micron |
Product Description
The Micron MT9HTF12872FY-80EEZD4ES is a 1 Gigabyte (GB) DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module. It utilizes the Fully Buffered DIMM (FB-DIMM) form factor, which incorporates an Advanced Memory Buffer (AMB) chip on each module. This buffer chip manages data flow and error checking, enabling higher memory densities and speeds compared to traditional unbuffered DIMMs, while also improving signal integrity. Operating at a clock speed of 800MHz (also known as PC2-6400), this module offers substantial bandwidth for memory-intensive applications. The CAS Latency (CL) of 6 indicates the number of clock cycles required to access data after a command is issued. The 1Rx8 designation signifies that the module is single-ranked and uses x8 (8-bit) DRAM chips, a common configuration for servers and workstations. This specific Micron memory module is designed for use in servers, workstations, and other high-performance computing environments where reliability, speed, and capacity are critical. FB-DIMMs are known for their robust error correction capabilities and are often found in systems that require high memory availability and data integrity.
