Micron MT9HTF12872FY-667E1E4 1GB DDR2-667MHz FB-DIMM 1Rx8 CL5 Memory

Description

The Micron MT9HTF12872FY-667E1E4 is a 1GB memory module engineered for server and workstation environments that utilize the DDR2 memory standard. As a Fully Buffered DIMM (FB-DIMM), it incorporates an Advanced Memory Buffer (AMB) chip on the module itself. This AMB chip acts as an intermediary between the memory controller and the DRAM chips, buffering all command, address, and clock signals. This buffering significantly reduces the electrical load on the memory controller, allowing for higher memory densities and improved signal integrity, which was a key challenge in scaling DDR2 memory systems. Operating at a frequency of 667MHz (also known as PC2-5300), this module delivers substantial bandwidth for its generation, suitable for memory-intensive server applications. The CAS Latency (CL) is rated at CL5, indicating the number of clock cycles between the memory controller issuing a read command and the data becoming available. The module is configured as 1Rx8, meaning it has a single rank with eight DRAM chips organized in an x8 configuration, a common setup for DDR2 modules. This FB-DIMM also supports Error-Correcting Code (ECC) functionality, which is critical for server environments where data integrity and system stability are paramount. ECC memory can detect and correct single-bit errors and detect multi-bit errors, preventing data corruption and system crashes. The 1.8V operating voltage is standard for DDR2 memory. The MT9HTF12872FY-667E1E4 is designed to enhance the reliability and performance of compatible server platforms.

Condition: Refurbished