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Micron MT8HTF6472FY-53EB4E3 512MB DDR2-533MHz FB-DIMM 1Rx8 CL4 Memory
- Capacity: 512MB
- Memory Type: DDR2 SDRAM
- Form Factor: FB-DIMM (Fully Buffered DIMM)
- Speed: 533MHz (PC2-4200)
- Rank: 1Rx8
- CAS Latency: CL4
- Advanced Memory Buffer (AMB)
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Micron MT8HTF6472FY-53EB4E3 is a 512MB DDR2 Fully Buffered DIMM (FB-DIMM) memory module. It operates at 533MHz with a CAS Latency of 4, designed for high-density server applications requiring advanced memory architecture.
Technical Information
| Memory Size | 512MB |
| Memory Type | DDR2 SDRAM |
| Module Type | FB-DIMM |
| Speed Rating | 533MHz |
Additional Specifications
| Part Number | MT8HTF6472FY-53EB4E3 |
| Rank | 1Rx8 |
| CAS Latency | CL4 |
Product Description
This Micron FB-DIMM module represents a significant advancement in server memory technology, offering higher densities and improved signal integrity compared to traditional DIMMs. The 512MB capacity, while modest by today's standards, was typical for high-density server configurations of its era. The DDR2 technology provides a solid foundation for performance in compatible systems. The 533MHz speed, corresponding to PC2-4200, ensures efficient data throughput for server workloads. The 1Rx8 organization signifies a single-rank configuration with eight internal banks per chip. A key feature of FB-DIMMs is the Advanced Memory Buffer (AMB) chip, which serializes data between the memory module and the memory controller. This buffering mechanism reduces the electrical loading on the memory bus, allowing for more memory modules to be installed on a single channel and improving overall system scalability. The MT8HTF6472FY-53EB4E3 also incorporates ECC functionality, which is critical for server environments where data accuracy and system stability are paramount. By detecting and correcting memory errors, ECC helps prevent data corruption and system crashes. This FB-DIMM is designed for servers that utilize this specific memory architecture, offering a reliable solution for memory expansion.
