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Micron MT72KSZS2G72LZ-1G4DZA4ES 16GB DDR3-1333MHz LRDIMM 4Rx4 Memory
- Capacity: 16GB
- Memory Type: DDR3 SDRAM
- Speed: 1333MHz (PC3-10600R)
- Form Factor: LRDIMM (Load-Reduced DIMM)
- Configuration: 4Rx4 (Four Ranks, Four Data Bits per Rank)
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
- Buffered: Yes (Load-Reduced)
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Product Overview
The Micron MT72KSZS2G72LZ-1G4DZA4ES is a 16GB DDR3 LRDIMM (Load-Reduced Dual In-line Memory Module) operating at 1333MHz. It features a 4Rx4 configuration, indicating four ranks of memory chips per module, each with four data bits.
Technical Information
| Memory Size | 16GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1333MHz |
| Module Type | LRDIMM |
Additional Specifications
| Rank | 4Rx4 |
| Voltage | 1.5V |
| ECC | Registered ECC |
| CAS Latency | CL11 |
Product Description
The Micron MT72KSZS2G72LZ-1G4DZA4ES is a high-capacity 16GB DDR3 Load-Reduced Dual In-line Memory Module (LRDIMM) designed for server and workstation environments that demand superior memory performance and stability. Operating at a speed of 1333MHz, this module is rated as PC3-10600R, indicating its bandwidth capability. The LRDIMM form factor is crucial for systems requiring higher memory capacities, as it reduces the electrical load on the memory controller, allowing for more DIMMs to be populated per channel. This specific module features a 4Rx4 configuration, meaning it utilizes four ranks of memory chips, with each rank consisting of four data bits. This advanced configuration allows for greater memory density and improved performance by enabling the memory controller to access different ranks concurrently. The inclusion of Error-Correcting Code (ECC) is standard for server-grade memory, providing real-time detection and correction of single-bit memory errors, thereby enhancing system reliability and preventing data corruption. With a standard operating voltage of 1.5V, the MT72KSZS2G72LZ-1G4DZA4ES is compatible with a wide range of DDR3-compatible server motherboards. Its robust design, high capacity, and advanced features make it an excellent choice for memory-intensive applications such as virtualization, large databases, scientific simulations, and high-performance computing, where system stability and maximum memory utilization are critical.
