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Micron MT72KGF4G72LZ-1G6 32GB DDR3-1600MHz LRDIMM 4Rx4 CL11 Memory
- Capacity: 32GB
- Memory Type: DDR3 SDRAM
- Form Factor: DIMM
- Type: Load-Reduced (LRDIMM)
- Speed: 1600MHz (PC3-12800)
- CAS Latency: CL11
- Rank: 4Rx4
- ECC: Yes (implied by LRDIMM)
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Product Overview
The Micron MT72KGF4G72LZ-1G6 is a 32GB DDR3 Load-Reduced DIMM (LRDIMM) memory module. It operates at 1600MHz with CL11 timings and features a 4Rx4 rank configuration, designed for high-density server memory applications.
Technical Information
| Memory Capacity | 32GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | DIMM |
| Module Type | LRDIMM (Load-Reduced DIMM) |
Additional Specifications
| Speed | 1600MHz |
| CAS Latency | CL11 |
| Rank | 4Rx4 |
Product Description
The Micron MT72KGF4G72LZ-1G6 is a high-capacity 32GB memory module built using DDR3 SDRAM technology. It operates at a speed of 1600MHz, commonly referred to as PC3-12800, providing substantial bandwidth for demanding server workloads. This module is specifically designed for enterprise environments that require large amounts of memory for virtualization, in-memory databases, high-performance computing, and other memory-intensive applications. This module is a Load-Reduced DIMM (LRDIMM), which incorporates a memory buffer chip. Unlike Registered DIMMs (RDIMMs), LRDIMMs buffer both command/address signals and data signals. This significantly reduces the electrical load on the memory controller, enabling systems to support much higher memory densities and more memory modules per channel than would be possible with RDIMMs or standard unbuffered DIMMs. LRDIMMs also inherently support ECC functionality for enhanced data integrity. The 4Rx4 rank configuration indicates that the module has four ranks, with each rank consisting of DRAM chips that are 4 bits wide. This configuration contributes to the module's high capacity and performance characteristics. With a CAS Latency (CL) of CL11, it specifies the timing for data access. The MT72KGF4G72LZ-1G6 is a robust memory solution for servers requiring maximum memory capacity and reliability.
