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Micron MT72HTS2G72PY-53EAZES 16GB DDR2-533MHz RDIMM 4Rx4 CL4 Memory
- Capacity: 16GB
- Type: DDR2
- Form Factor: RDIMM (Registered DIMM)
- Speed: 533MHz (PC2-4200)
- Latency: CL4
- Rank: 4Rx4 (Quad Rank, x4 organization)
- Designed for server applications requiring DDR2 memory
- High density for its generation
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Product Overview
The Micron MT72HTS2G72PY-53EAZES is a 16GB DDR2 RDIMM memory module. It operates at 533MHz with CL4 latency, designed for older server systems requiring specific memory types and capacities.
Technical Information
| Capacity | 16GB |
| Memory Type | DDR2 |
| Form Factor | RDIMM |
| Speed | 533MHz |
Additional Specifications
| CAS Latency | CL4 |
| Rank | 4Rx4 |
| Manufacturer | Micron |
Product Description
The Micron MT72HTS2G72PY-53EAZES is a 16GB DDR2 Registered DIMM (RDIMM) module, specifically designed for server and workstation systems that utilize the DDR2 memory standard. RDIMMs include a register chip that buffers command and address signals, which helps to reduce the electrical load on the memory controller, enabling higher memory capacities and improved stability in systems with multiple DIMMs. This module operates at a speed of 533MHz, which was a common speed for DDR2 memory in server environments. With a CAS Latency (CL) of 4, this memory module offers a specific timing characteristic suitable for DDR2 systems. The 4Rx4 organization indicates that it is a quad-rank module with a x4 data width per rank. This high-density configuration was often used in servers to maximize the amount of memory that could be installed in a system, supporting demanding applications of its era. This Micron DDR2 RDIMM is a crucial component for maintaining or upgrading older server infrastructure that relies on DDR2 memory technology. Its specifications, including the 533MHz speed and CL4 latency, are tailored for compatibility and performance within the DDR2 ecosystem. The PC2-4200 designation confirms its data transfer rate, ensuring it meets the requirements for systems supporting this specific type of memory.
