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Micron MT72HTS1G72MDY-53EH1B5 8GB DDR2-533MHz CDIMM 4Rx4 CL4 Memory
- Memory Type: DDR2 SDRAM
- Capacity: 8GB
- Speed: 533MHz (PC2-4200)
- Form Factor: CDIMM (184-pin)
- Configuration: 4 ranks x 4 bits
- Latency: CL4
- Voltage: 1.8V
- ECC: Yes (Error-Correcting Code)
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Product Overview
The Micron MT72HTS1G72MDY-53EH1B5 is an 8GB DDR2 SDRAM memory module. It operates at 533MHz with a 4Rx4 configuration and CL4 latency, designed for server and workstation applications.
Technical Information
| Product Type | Memory Module |
| Memory Technology | DDR2 SDRAM |
| Capacity | 8 GB |
| Speed | 533 MHz |
Additional Specifications
| Form Factor | CDIMM |
| Rank | 4Rx4 |
| CAS Latency | CL4 |
| ECC | Yes |
Product Description
The Micron MT72HTS1G72MDY-53EH1B5 is a high-density 8GB DDR2 Synchronous Dynamic Random-Access Memory (SDRAM) module. It is engineered to provide enhanced performance and reliability for server and workstation platforms that utilize DDR2 memory technology. Operating at a clock speed of 533MHz, which corresponds to a PC2-4200 data rate, this module offers substantial bandwidth for demanding computing workloads. This memory module features a 4 ranks x 4 bits (4Rx4) organization, enabling efficient data access and improved performance in multi-processor environments. It also includes Error-Correcting Code (ECC) functionality, which is crucial for detecting and correcting single-bit errors, thereby significantly enhancing data integrity and system stability. The CDIMM (184-pin) form factor is standard for DDR2 memory modules commonly found in servers. With a CAS Latency (CL) of 4, the MT72HTS1G72MDY-53EH1B5 strikes a balance between speed and timing, making it suitable for a wide array of enterprise applications. Its standard 1.8V operating voltage is consistent with DDR2 memory specifications. This module represents an excellent choice for upgrading existing systems or configuring new servers that require dependable, high-capacity memory solutions.
