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Micron MT36KSZF51272PZ-1G4F1AD 4GB DDR3-1333MHz RDIMM 2Rx4 CL9 Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: RDIMM (Registered DIMM)
- Speed: 1333MHz (PC3-10600R)
- Organization: 2Rx4 (Dual Rank x4)
- Latency: CL9
- Voltage: 1.5V
- ECC: Registered ECC
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Product Overview
The Micron MT36KSZF51272PZ-1G4F1AD is a 4GB DDR3 Registered DIMM (RDIMM) memory module. It operates at 1333MHz with a 2Rx4 organization and CL9 latency, suitable for servers and workstations requiring reliable memory.
Technical Information
| Manufacturer | Micron |
| Part Number | MT36KSZF51272PZ-1G4F1AD |
| Memory Size | 4GB |
| Memory Technology | DDR3 SDRAM |
| Module Type | RDIMM |
Additional Specifications
| Speed Rating | 1333MHz |
| Rank | Dual Rank (2Rx4) |
| CAS Latency | CL9 |
| Voltage | 1.5V |
Product Description
This Micron 4GB DDR3 RDIMM is designed for server and workstation environments where stability, reliability, and error correction are critical. The 1333MHz speed provides efficient data throughput, while the RDIMM form factor includes a register chip that buffers command and address signals, reducing the electrical load on the memory controller and enabling higher memory capacities and densities. The 2Rx4 organization indicates a dual-rank module, with each rank composed of four memory chips. This configuration can offer performance advantages in certain system architectures by allowing the memory controller to access different ranks independently, potentially improving efficiency. The CL9 CAS Latency specifies the delay between the memory controller requesting data and the data being available, with lower latency generally indicating faster response times. As a Registered ECC (Error-Correcting Code) module, it provides enhanced data integrity by detecting and correcting common memory errors. This feature is indispensable for servers and critical applications that demand high levels of accuracy and uptime. The standard 1.5V operating voltage is typical for DDR3 memory modules.
