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Micron MT36KSF2G72PZ-1G6P1KE 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory
- Capacity: 16GB
- Memory Type: DDR3 SDRAM
- Form Factor: 240-pin RDIMM
- Speed: PC3-12800 (1600MHz)
- CAS Latency: CL11
- Configuration: 2Rx4 (Dual Rank, x4 Data Width)
- ECC: Registered ECC
- Voltage: 1.5V
- Designed for server and workstation applications
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Product Overview
The Micron MT36KSF2G72PZ-1G6P1KE is a 16GB DDR3 Registered DIMM (RDIMM) memory module. It operates at 1600MHz with a CAS Latency of 11, featuring a 2Rx4 configuration. This module is designed for servers and high-performance workstations requiring reliable and high-capacity memory.
Technical Information
| Product Type | Memory Module |
| Manufacturer | Micron |
| Model | MT36KSF2G72PZ-1G6P1KE |
| Capacity | 16GB |
| Memory Technology | DDR3 SDRAM |
Additional Specifications
| Speed | 1600MHz |
| Form Factor | RDIMM |
| Rank | 2Rx4 |
| CAS Latency | CL11 |
Product Description
The Micron MT36KSF2G72PZ-1G6P1KE is a high-density 16GB Registered DIMM (RDIMM) module utilizing DDR3 SDRAM technology. It operates at a clock speed of 1600MHz, corresponding to a PC3-12800 designation, and features a CAS Latency (CL) of 11. The 2Rx4 configuration signifies a dual-rank module where each rank is composed of DRAM chips with a x4 data width. This architecture can enhance memory bandwidth and performance in compatible systems. This RDIMM includes Registered ECC (Error-Correcting Code) capabilities. The 'Registered' feature adds a buffer chip that manages command and address signals, reducing the electrical load on the memory controller. This allows for greater memory capacity and higher speeds to be supported. The ECC functionality is critical for maintaining data integrity by detecting and correcting memory errors, which is essential for the stability and reliability of servers and workstations running critical applications. Engineered for demanding server and workstation environments, the MT36KSF2G72PZ-1G6P1KE is designed to provide robust performance and stability. It is an ideal component for upgrading existing systems or populating new ones that require significant amounts of reliable memory. By increasing system memory, users can expect improved multitasking, faster data processing, and enhanced overall system responsiveness for memory-intensive tasks.
