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Micron MT36KSF2G72PZ-1G6E1K 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory

Micron MT36KSF2G72PZ-1G6E1K 16GB DDR3-1600MHz RDIMM 2Rx4 CL11 Memory

SKU:MT36KSF2G72PZ-1G6E1K
  • Capacity: 16GB
  • Type: DDR3 SDRAM
  • Form Factor: RDIMM (Registered DIMM)
  • Speed: 1600MHz (PC3-12800)
  • Rank: 2Rx4 (Dual Rank x4)
  • Voltage: 1.5V
  • ECC: Yes (Error-Correcting Code)
  • Latency: CL11
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Product Overview

This Micron 16GB DDR3 RDIMM is designed for servers and workstations requiring reliable memory performance. It operates at 1600MHz, providing a solid foundation for multitasking and running demanding applications. The 2Rx4 configuration ensures efficient memory access.

Technical Information

Memory TypeDDR3 SDRAM
Capacity16GB
Speed1600MHz
Form FactorRDIMM

Additional Specifications

Rank2Rx4
Voltage1.5V
ECCYes
CAS LatencyCL11

Product Description

The Micron MT36KSF2G72PZ-1G6E1K is a 16GB DDR3 Registered DIMM (RDIMM) module, designed to enhance the memory capacity and performance of compatible server and workstation systems. Operating at a frequency of 1600MHz, this module offers a substantial bandwidth suitable for memory-intensive tasks, ensuring smooth operation of applications and multitasking capabilities. The 2Rx4 organization indicates a dual-rank module with four memory chips per rank. This configuration helps distribute the memory load, potentially improving performance and allowing for higher memory densities. As an RDIMM, it includes an onboard register that buffers command and address signals, reducing the electrical load on the memory controller and enabling systems to support larger amounts of RAM. This memory module also features Error-Correcting Code (ECC) functionality, which is crucial for maintaining data integrity in critical server environments by detecting and correcting single-bit errors. With a standard 1.5V operating voltage and CL11 latency, it is designed for compatibility with DDR3-based platforms that require reliable and efficient memory solutions for demanding workloads.

Condition:Refurbished

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