Micron MT36HTF51272FY-667EZD3ES 4GB DDR2-667MHz FB-DIMM 2Rx4 Memory

Product Description

The Micron MT36HTF51272FY-667EZD3ES is a 4GB memory module, identical in specifications to the MT36HTF51272FY-667EYD6ES, belonging to the DDR2 generation and utilizing the Fully Buffered DIMM (FB-DIMM) form factor. Like its counterpart, this module operates at a speed of 667MHz (PC2-5300F) and features a 2Rx4 configuration, indicating it is dual-ranked and uses x4 DRAM chips. The presence of the Advanced Memory Buffer (AMB) chip on the FB-DIMM is characteristic of this memory type, designed to enhance signal integrity and allow for higher memory densities and frequencies in server systems of that era. This memory module is intended for servers and workstations that require DDR2 FB-DIMM memory. The 4GB capacity per module, combined with the potential for multiple modules and ranks, allows for significant total system memory configurations, which are essential for memory-intensive enterprise applications, virtualization, and complex database operations. The 667MHz speed offers a balance between performance and compatibility within the DDR2 standard. While the 'EYD6ES' and 'EZD3ES' suffixes might denote minor manufacturing or packaging differences, the core technical specifications (capacity, type, speed, rank) for these two part numbers are the same. Both are designed to provide reliable memory expansion for server platforms that rely on DDR2 FB-DIMM technology, serving as crucial components for systems that were prevalent before the widespread adoption of DDR3 and subsequent memory generations.