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Micron MT36HTF25672FY-53EBZE4ES 2GB DDR2-533MHz FB-DIMM 2Rx4 Memory
- Capacity: 2GB
- Type: DDR2 SDRAM
- Form Factor: FB-DIMM (Fully Buffered DIMM)
- Speed: 533MHz (PC2-4200)
- Configuration: 2Rx4 (Dual Rank x4)
- ECC: Yes (Error-Correcting Code)
- Designed for server environments requiring high memory bandwidth and reliability.
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Product Overview
The Micron MT36HTF25672FY-53EBZE4ES is a 2GB DDR2 Fully Buffered DIMM (FB-DIMM) memory module. It operates at 533MHz and features a 2Rx4 configuration, suitable for high-performance servers and workstations.
Technical Information
| Capacity | 2 GB |
| Memory Type | DDR2 SDRAM |
| Form Factor | FB-DIMM |
Additional Specifications
| Speed | 533 MHz |
| Module Type | 2Rx4 |
| ECC | Registered ECC |
Product Description
This Micron memory module, identified by SKU MT36HTF25672FY-53EBZE4ES, offers a 2GB capacity of DDR2 SDRAM. It is a Fully Buffered DIMM (FB-DIMM), a type of memory module designed for servers and high-end workstations that require increased memory bandwidth and improved signal integrity. FB-DIMMs utilize an Advanced Memory Buffer (AMB) chip to serialize data, allowing for higher clock speeds and more modules per channel compared to traditional unbuffered DIMMs. The module operates at a speed of 533MHz, corresponding to a PC2-4200 rating, and features a 2Rx4 configuration. This means it has two ranks of memory chips, with each rank utilizing x4 data width chips. This configuration can offer performance benefits in certain memory access patterns. As an FB-DIMM, it also incorporates ECC (Error-Correcting Code) functionality, which is crucial for maintaining data integrity in server environments by detecting and correcting single-bit errors. This specific FB-DIMM is designed for compatibility with systems that support DDR2 FB-DIMM memory. Its 2GB capacity and 533MHz speed make it a suitable component for upgrading or populating memory in servers that prioritize memory bandwidth and reliability. The FB-DIMM architecture, while requiring more power and generating more heat due to the AMB chip, was a key technology for scaling memory capacity and performance in its era.
