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Micron MT18KSF51272PZ-1G4DZES 4GB DDR3-1333MHz RDIMM 1Rx4 CL9 Memory
- 4GB DDR3 SDRAM capacity
- 1333MHz memory speed
- Registered DIMM (RDIMM) for server use
- 1Rx4 memory organization (Rank x Banks)
- CL9 CAS Latency
- ECC (Error-Correcting Code) support
- 1.5V voltage operation
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Product Overview
The Micron MT18KSF51272PZ-1G4DZES is a 4GB DDR3 Registered DIMM (RDIMM) memory module. It operates at a speed of 1333MHz with a CAS Latency of 9 (CL9). This module is designed for server and workstation applications requiring high reliability and performance.
Technical Information
| Capacity | 4GB |
| Memory Type | DDR3 SDRAM |
| Form Factor | RDIMM (Registered DIMM) |
| Speed | 1333MHz |
Additional Specifications
| CAS Latency | CL9 |
| Organization | 1Rx4 |
| Voltage | 1.5V |
| ECC | Yes |
Product Description
The Micron MT18KSF51272PZ-1G4DZES is a high-performance 4GB DDR3 Registered DIMM (RDIMM) memory module, specifically engineered for demanding server and workstation environments. Operating at a clock speed of 1333MHz, it provides substantial bandwidth for memory-intensive applications. The RDIMM form factor includes an onboard register that buffers address and control signals, reducing electrical load on the memory controller and allowing for higher memory capacities and improved system stability, which is critical in enterprise-grade systems. This module features a 1Rx4 memory organization, indicating one rank of memory with four bits accessed per memory chip. It also supports Error-Correcting Code (ECC), a vital feature for servers that detects and corrects single-bit memory errors, preventing data corruption and system crashes. The CAS Latency (CL) of 9 signifies the number of clock cycles it takes for the memory to respond to a column address command, contributing to the overall performance characteristics of the module. With a standard operating voltage of 1.5V, this DDR3 RDIMM is designed for power efficiency within its performance class. The MT18KSF51272PZ-1G4DZES is an ideal choice for upgrading or populating memory in servers, high-performance workstations, and other systems that require reliable, high-capacity, and error-corrected memory solutions to ensure optimal operation and data integrity.
