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Micron MT18KSF51272AZ-1G6K1ZE 4GB DDR3-1600MHz UDIMM 2Rx8 CL11 Memory
- Capacity: 4GB
- Type: DDR3 SDRAM
- Speed: 1600MHz (PC3-12800)
- Form Factor: UDIMM (Unbuffered DIMM)
- Configuration: 2Rx8 (Dual Rank, x8 organization)
- Latency: CL11
- Voltage: 1.5V
- Manufacturer: Micron
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Product Overview
This is a Micron 4GB DDR3-1600MHz UDIMM memory module. It features a 2Rx8 configuration and CL11 latency, designed for reliable performance in compatible desktop or server systems.
Technical Information
| Memory Size | 4GB |
| Memory Type | DDR3 SDRAM |
| Memory Speed | 1600MHz |
| Module Type | UDIMM |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL11 |
| Voltage | 1.5V |
| Manufacturer | Micron |
Product Description
The Micron MT18KSF51272AZ-1G6K1ZE is a 4GB DDR3 Unbuffered DIMM (UDIMM) memory module, engineered for enhanced system performance and stability. Operating at a speed of 1600MHz, commonly referred to as PC3-12800, this module provides a significant boost for memory-intensive applications and multitasking capabilities. This module features a 2Rx8 configuration, indicating it is dual-rank with an x8 data width per rank. This design can offer improved performance in certain system architectures by allowing the memory controller to access different ranks independently. The CAS Latency (CL) is rated at CL11, signifying the number of clock cycles required to access a particular column in memory, contributing to its overall responsiveness. Designed for compatibility with a wide range of desktop computers and servers that support DDR3 UDIMM memory, this Micron module is a reliable choice for upgrades or replacements. It operates at a standard voltage of 1.5V, ensuring broad compatibility with motherboards designed for DDR3 memory technology. The MT18KSF51272AZ-1G6K1ZE is built to Micron's high standards for quality and reliability.
