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Micron MT18KSF51272AZ-1G4M1ZG 4GB DDR3-1333MHz UDIMM 2Rx8 CL9 Memory
- Memory Size: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: UDIMM (Unbuffered DIMM)
- Speed: PC3-10600 (1333MHz)
- Organization: 2Rx8 (Dual Rank, x8 data width)
- Latency: CL9 (CAS Latency 9)
- Voltage: 1.5V
- ECC: Non-ECC
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Product Overview
The Micron MT18KSF51272AZ-1G4M1ZG is a 4GB DDR3 Unbuffered DIMM (UDIMM) memory module. It operates at 1333MHz with 2Rx8 organization and CL9 latency, suitable for standard server and workstation memory upgrades.
Technical Information
| Memory Capacity | 4GB |
| Memory Technology | DDR3 SDRAM |
| Form Factor | UDIMM |
| Speed | 1333MHz |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL9 |
| Voltage | 1.5V |
Product Description
The Micron MT18KSF51272AZ-1G4M1ZG is a 4GB DDR3 Unbuffered DIMM (UDIMM) memory module designed to enhance the performance of compatible computing systems. Operating at a speed of 1333MHz (PC3-10600), this module provides a significant boost in data transfer rates compared to older DDR generations. Its 2Rx8 configuration indicates a dual-rank design with an x8 data width per rank, which can optimize memory access patterns for improved system efficiency. This UDIMM is intended for use in standard servers and workstations that utilize DDR3 memory technology and do not require ECC (Error-Correcting Code) functionality. The CAS Latency (CL) of 9 is a measure of the delay in clock cycles between the memory controller issuing a read command and the data becoming available. A CL9 rating at 1333MHz is a common specification that balances performance and compatibility. With a standard operating voltage of 1.5V, the MT18KSF51272AZ-1G4M1ZG ensures broad compatibility with motherboards designed for DDR3 memory. This 4GB module serves as an effective solution for increasing system memory capacity, leading to faster application loading, smoother multitasking, and improved system responsiveness. It is a reliable choice for users looking to upgrade their existing systems or build new ones that benefit from increased RAM.
