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Micron MT18KSF1G72AZ-1G6P1 8GB DDR3-1600MHz UDIMM 2Rx8 CL11 Memory

SKU MT18KSF1G72AZ-1G6P1
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  • 8GB DDR3 SDRAM capacity.
  • 1600MHz (PC3-12800) memory speed.
  • UDIMM (Unbuffered DIMM) type.
  • 2Rx8 organization (Dual Rank, x8 data width).
  • CAS Latency (CL) of 11.
  • Standard height form factor.
  • 1.5V voltage operation.
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Key specifications

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Memory Type
DDR3 SDRAM
Capacity
8GB
Speed
1600MHz
Form Factor
UDIMM
Rank
2Rx8
CAS Latency
CL11

Product details

The Micron MT18KSF1G72AZ-1G6P1 is an 8GB DDR3 Unbuffered DIMM (UDIMM) memory module. It operates at 1600MHz with a CAS Latency of 11, featuring a standard height form factor for broad compatibility.

Specifications

Memory Type
DDR3 SDRAM
Capacity
8GB
Speed
1600MHz
Form Factor
UDIMM
Rank
2Rx8
CAS Latency
CL11
Voltage
1.5V

Description

The Micron MT18KSF1G72AZ-1G6P1 is an 8GB DDR3 memory module designed to enhance the performance and capacity of compatible computer systems. It operates at a speed of 1600MHz, providing efficient data throughput for a variety of computing tasks, from general office productivity to more demanding applications. This module is an Unbuffered DIMM (UDIMM), a common type of RAM used in many desktop and server configurations. The 2Rx8 organization indicates a dual-rank design with an x8 data width per rank, which can contribute to improved memory access efficiency for the system's memory controller. The CAS Latency (CL) is rated at 11, a standard specification for DDR3 memory at this speed, ensuring a good balance between performance and stability. Operating at the standard 1.5V, the MT18KSF1G72AZ-1G6P1 ensures broad compatibility with a wide range of motherboards and systems that support DDR3 memory. Its standard height form factor makes it suitable for most typical desktop computer cases and server chassis where internal space is not a limiting factor. This memory module serves as a reliable option for upgrading existing systems or for use in new builds requiring efficient and cost-effective memory solutions.

Condition: Refurbished

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