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Micron MT18JSF51272AZ-1G9E2ZE 4GB DDR3-1866MHz UDIMM 2Rx8 CL13 Memory
- 4GB capacity
- DDR3 SDRAM technology
- 1866MHz memory speed
- UDIMM form factor (Unbuffered DIMM)
- 2Rx8 configuration (Dual Rank, x8 data width)
- CL13 latency
- 240-pin connector
- Designed for servers and workstations
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Product Overview
The Micron MT18JSF51272AZ-1G9E2ZE is a 4GB DDR3 UDIMM memory module. It operates at 1866MHz with a CL13 latency and features a 2Rx8 configuration.
Technical Information
| Product Type | Memory Module |
| Capacity | 4GB |
| Memory Technology | DDR3 SDRAM |
| Speed | 1866MHz |
| Form Factor | UDIMM |
Additional Specifications
| Rank | 2Rx8 |
| Latency | CL13 |
| Voltage | 1.5V |
| Pins | 240-pin |
| Manufacturer | Micron |
Product Description
The Micron MT18JSF51272AZ-1G9E2ZE is a high-performance 4GB DDR3 Unbuffered DIMM (UDIMM) memory module. Engineered for reliability and speed, it operates at a frequency of 1866MHz, providing enhanced data transfer rates for demanding computing tasks. The module utilizes DDR3 SDRAM technology, offering improved power efficiency and performance compared to previous generations. This memory module features a 2Rx8 configuration, indicating it is dual-ranked with an x8 data width per rank. This configuration can offer performance benefits in certain system architectures. With a CAS Latency (CL) of 13, it strikes a balance between speed and timing, ensuring efficient operation. The standard 240-pin connector is compatible with a wide range of motherboards designed for DDR3 UDIMMs, commonly found in servers, workstations, and high-end desktop systems. Designed for applications that require significant memory bandwidth and capacity, such as virtualization, large databases, scientific simulations, and content creation, this Micron memory module is a reliable choice. Its specifications are geared towards providing stable and efficient performance, making it suitable for mission-critical systems. The MT18JSF51272AZ-1G9E2ZE is a key component for upgrading system performance and ensuring smooth operation of memory-intensive applications.
