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Micron MT18JSF51272AZ-1G4M1ZE 4GB DDR3-1333MHz UDIMM 2Rx8 CL9 Memory
- Capacity: 4GB
- Memory Type: DDR3 SDRAM
- Form Factor: UDIMM (Unbuffered DIMM)
- Speed: 1333MHz (PC3-10600)
- CAS Latency: CL9
- Configuration: 2Rx8 (Dual Rank x8)
- Voltage: 1.5V (Standard DDR3)
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Product Overview
The Micron MT18JSF51272AZ-1G4M1ZE is a 4GB DDR3 UDIMM memory module. It operates at a speed of 1333MHz with a CAS Latency of 9 (CL9). This module features a 2Rx8 configuration, indicating two ranks of eight memory chips, making it suitable for a wide range of server and workstation applications requiring reliable memory upgrades.
Technical Information
| Capacity | 4GB |
| Memory Type | DDR3 SDRAM |
| Speed | 1333MHz |
| Form Factor | UDIMM |
Additional Specifications
| CAS Latency | CL9 |
| Rank | 2Rx8 |
| Voltage | 1.5V |
Product Description
The Micron MT18JSF51272AZ-1G4M1ZE is a 4GB DDR3 Unbuffered DIMM (UDIMM) memory module designed for enhanced system performance. Operating at a frequency of 1333MHz, it provides a significant boost in data processing capabilities for compatible systems. The module adheres to the DDR3 standard, offering improved bandwidth and lower power consumption compared to its DDR2 predecessors. This memory module features a 2Rx8 organization, meaning it utilizes two ranks of memory chips, each with eight bits of data width. This dual-rank configuration can offer performance advantages in certain system architectures by allowing the memory controller to access data from different ranks concurrently. The CAS Latency (CL) of 9 indicates the number of clock cycles it takes for the memory to respond to a column address strobe command, contributing to its overall timing performance. As an unbuffered DIMM, this module is typically used in desktop computers, workstations, and some entry-level servers that do not require the advanced error correction features of Registered DIMMs (RDIMMs). The 1.5V operating voltage is standard for DDR3 memory. This 4GB module is an ideal choice for upgrading existing systems or for building new ones where increased memory capacity and speed are desired for multitasking, running memory-intensive applications, and improving overall system responsiveness.
