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Micron MT18JSF1G72PDZ-1G9E1 8GB DDR3-1866MHz RDIMM 2Rx8 CL13 Memory
- Capacity: 8GB
- Type: DDR3 SDRAM
- Speed: 1866MHz (PC3-14900)
- Form Factor: RDIMM (Registered DIMM)
- Configuration: 2Rx8 (Dual Rank x8)
- Voltage: 1.5V
- ECC: Yes (Error-Correcting Code)
- CAS Latency: CL13
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Product Overview
The Micron MT18JSF1G72PDZ-1G9E1 is an 8GB DDR3-1866MHz RDIMM memory module. It is configured as 2Rx8, indicating dual rank and eight memory chips per rank. This module is designed for servers and workstations demanding high speed and reliability.
Technical Information
| Memory Capacity | 8GB |
| Memory Type | DDR3 SDRAM |
| Memory Speed | 1866MHz |
| Form Factor | RDIMM |
Additional Specifications
| Rank | 2Rx8 |
| CAS Latency | CL13 |
| Voltage | 1.5V |
| ECC | Registered ECC |
Product Description
The Micron MT18JSF1G72PDZ-1G9E1 is a high-performance 8GB memory module designed for server and workstation applications that require enhanced speed and data integrity. It utilizes DDR3 SDRAM technology, operating at a frequency of 1866MHz, which corresponds to a PC3-14900 designation. This higher clock speed compared to standard DDR3 modules allows for faster data processing and improved overall system responsiveness, making it suitable for memory-intensive tasks such as virtualization, large database operations, and complex simulations. This module is a Registered DIMM (RDIMM), meaning it includes an onboard register that buffers command and address signals. This buffering reduces the electrical load on the memory controller, enabling systems to support higher memory capacities and maintain stability. The 2Rx8 configuration indicates dual rank with eight memory chips per rank, which can offer performance benefits in certain system architectures. Crucially, it supports Error-Correcting Code (ECC), which detects and corrects single-bit memory errors, ensuring the reliability and accuracy of data processing – a critical feature for server environments where uptime and data integrity are paramount. The module operates at a standard voltage of 1.5V and features a CAS Latency (CL) of 13. Lower CAS latency generally indicates faster response times for memory operations. With its combination of capacity, speed, ECC support, and registered architecture, the MT18JSF1G72PDZ-1G9E1 is a robust memory solution designed to meet the rigorous demands of modern enterprise computing infrastructure, providing both performance and reliability.
