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Micron MT18JDF51272PDZ-1G6K1FE 4GB DDR3-1600MHz VLP RDIMM 2Rx8 Memory

SKU MT18JDF51272PDZ-1G6K1FE
Brand Micron
  • Capacity: 4GB
  • Memory Type: DDR3 SDRAM
  • Speed: 1600MHz (PC3-12800)
  • Form Factor: VLP RDIMM (Very Low Profile Registered DIMM)
  • Rank: 2Rx8 (Dual Rank x8)
  • Voltage: Standard DDR3 voltage
  • ECC: Registered ECC (Error-Correcting Code)
  • Latency: CL11
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Key specifications

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Memory Size
4GB
Memory Type
DDR3 SDRAM
Speed
1600MHz
Form Factor
VLP RDIMM
Rank
2Rx8
ECC
Registered ECC

Product details

The Micron MT18JDF51272PDZ-1G6K1FE is a 4GB DDR3-1600MHz VLP RDIMM memory module. It features a 2Rx8 configuration, indicating dual-rank and 8-bit prefetch architecture. This module is designed for high-performance computing environments requiring reliable and efficient memory solutions.

Technical Information

Memory Size4GB
Memory TypeDDR3 SDRAM
Speed1600MHz
Form FactorVLP RDIMM

Additional Specifications

Rank2Rx8
ECCRegistered ECC
Voltage1.5V
CAS LatencyCL11

Description

The Micron MT18JDF51272PDZ-1G6K1FE is a high-density, high-performance memory module engineered for demanding server and workstation applications. Its DDR3 technology offers significant improvements in bandwidth and power efficiency compared to previous generations. The Very Low Profile (VLP) form factor is crucial for systems with limited height clearance, such as 1U rackmount servers, ensuring compatibility without compromising performance. The 2Rx8 configuration signifies that the module is dual-ranked, with each rank composed of eight memory chips. This dual-rank design can enhance performance by allowing the memory controller to access different ranks concurrently, effectively increasing the data throughput. The Registered DIMM (RDIMM) architecture includes an onboard register that buffers command and address signals, reducing electrical load on the memory controller and enabling higher memory capacities and speeds. This module supports Error-Correcting Code (ECC) functionality, which is vital for maintaining data integrity in critical computing environments. ECC memory can detect and correct single-bit errors on the fly, preventing data corruption and system crashes. With a speed of 1600MHz and a CAS latency of CL11, the MT18JDF51272PDZ-1G6K1FE provides a robust and reliable memory solution for enterprise-level computing.

Condition: Refurbished

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