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Micron MT18HTF25672FDY-667A5D3 2GB DDR2-667MHz FB-DIMM 2Rx8 CL5 Memory

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Micron MT18HTF25672FDY-667A5D3 2GB DDR2-667MHz FB-DIMM 2Rx8 CL5 Memory

SKU MT18HTF25672FDY-667A5D3
Brand Micron
  • 2GB DDR2 SDRAM capacity
  • 667MHz (PC2-5300) memory speed
  • FB-DIMM (Fully Buffered DIMM) form factor
  • 2Rx8 module configuration (Dual Rank, x8 data width)
  • CAS Latency (CL) of 5
  • Suitable for server and workstation upgrades
  • ECC (Error-Correcting Code) support
  • Standard 1.8V operating voltage
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Key specifications

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Capacity
2GB
Memory Type
DDR2 SDRAM
Speed
667MHz
Form Factor
FB-DIMM
Rank
2Rx8
CAS Latency
CL5

Product details

The Micron MT18HTF25672FDY-667A5D3 is a 2GB DDR2 FB-DIMM memory module, operating at 667MHz with a CL5 latency. This module is designed for server and workstation applications requiring reliable and high-speed memory. Its fully buffered architecture enhances system stability and allows for higher memory capacities.

Technical Information

Capacity2GB
Memory TypeDDR2 SDRAM
Speed667MHz
Form FactorFB-DIMM

Additional Specifications

Rank2Rx8
CAS LatencyCL5
Voltage1.8V
ECCYes

Description

This Micron MT18HTF25672FDY-667A5D3 module represents a 2GB component of DDR2 memory, specifically engineered for the demanding environments of servers and high-performance workstations. The DDR2 technology provides a substantial increase in data transfer rates over its DDR predecessors, making it suitable for applications that are bottlenecked by memory bandwidth. The FB-DIMM (Fully Buffered DIMM) design is a key feature, incorporating an Advanced Memory Buffer (AMB) chip that isolates the memory chips from the memory controller. This buffer reduces electrical interference and signal degradation, allowing for higher memory densities and improved signal integrity across multiple modules. The module's specification of 667MHz indicates its operational frequency, translating to a theoretical peak bandwidth of 5333 MB/s per module (667 million transfers per second * 8 bytes per transfer). The 2Rx8 designation signifies a dual-rank configuration with x8 data width per DRAM chip, which can offer performance advantages in certain memory access patterns. The CAS Latency of 5 (CL5) is a measure of the delay between the memory controller issuing a read command and the data becoming available from the memory module. A lower CL value generally indicates faster performance, though it must be considered in conjunction with clock speed. As a standard for server-grade memory, this module includes ECC (Error-Correcting Code) capabilities. ECC memory is crucial for systems where data integrity is paramount, as it can detect and correct common types of memory errors, thereby preventing data corruption and system instability. The module operates at the standard 1.8V required for DDR2 FB-DIMMs. Its combination of capacity, speed, form factor, and error correction makes it a robust choice for upgrading memory in compatible server systems.

Condition: Refurbished

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